B. Lherron

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

Pierre Morin, Sylvain Maitrejean, Frederic Allibert, 2016 .

UTBB FDSOI scaling enablers for the 10nm node

O. Rozeau, O. Faynot, B. Lherron, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

B. Lherron, D. Chanemougame, P. Oldiges, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node

O. Faynot, Y. Escarabajal, B. Lherron, 2014, 2014 IEEE International Electron Devices Meeting.

A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

Pierre Morin, Sylvain Maitrejean, Nicolas Loubet, 2015 .