Marcello Bellodi

发表

New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures

Denis Flandre, Joao Antonio Martino, Marcello Bellodi, 1996 .

Introduction of the SOI MOSFET dimensions in the high-temperature leakage drain current model

Denis Flandre, Joao Antonio Martino, Marcello Bellodi, 1996 .

Modelling of the leakage drain current in accumulation-mode SOI pMOSFETs for high-temperature applications

Denis Flandre, Benjamin Iniguez, Joao Antonio Martino, 2001 .

Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C

Denis Flandre, Benjamin Iniguez, Joao Antonio Martino, 2000 .

A simple leakage drain current model for accumulation-mode SOI nMOSFETs operating up to 300°C

Denis Flandre, Benjamin Iniguez, Joao Antonio Martino, 2001 .

Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures

Denis Flandre, Benjamin Iniguez, Joao Antonio Martino, 2000 .

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices

Eddy Simoen, Anabela Veloso, João Antonio Martino, 2021, Microelectron. J..

Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures

Joao Antonio Martino, Marcello Bellodi, 2003 .

Drain Leakage Current Evaluation in the Diamond SOI nMOSFET at High Temperatures

Salvador Pinillos Gimenez, Marcello Bellodi, 2009 .