Byung-Seop Hong

Manufacturable 0.13 μm DRAM Technology for 512M DDR DRAM

Dae-Young Kim, Jae-Beom Park, Donggyu Yim, 2001 .

A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect

Jae-Beom Park, Gyuhan Yoon, Byung-Seop Hong, 2000 .