J A Salcedo

Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient Stresses

S Malobabic, J A Salcedo, J Hajjar, 2010, IEEE Transactions on Electron Devices.

Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses

Yuanzhong Zhou, J A Salcedo, J Hajjar, 2010, IEEE Transactions on Electron Devices.