Kai Fu

发表

Test bed for power amplifier behavioral characterization and modeling

Choi Look Law, Kai Fu, Than Tun Thein, 2013 .

Behavioral model on transmitter power amplifier and IQ imbalance

Kai Fu, 2014 .

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Baoshun Zhang, Xiaodong Zhang, Yong Cai, 2017 .

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Transactions on Electron Devices.

Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Jin Wei, Baoshun Zhang, Yong Cai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Wei Huang, Baoshun Zhang, Yong Cai, 2016, IEEE Transactions on Electron Devices.

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Wei Huang, Baoshun Zhang, Yong Cai, 2015, IEEE Electron Device Letters.

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Baoshun Zhang, Qi Zhou, Jie Yuan, 2017, IEEE Electron Device Letters.

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Electron Device Letters.

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ - ${n}$ Junctions With Low Leakage for GaN Power Electronics

Xuanqi Huang, Houqiang Fu, Chen Yang, 2019, IEEE Electron Device Letters.

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

Baoshun Zhang, Wei Huang, Zhang Zhili, 2014 .

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Xuanqi Huang, Houqiang Fu, Jossue Montes, 2018, Applied Physics Letters.