B. Jagannathan

发表

Effect of the hetero-interface on the photoresponse of a-Si/c-Si solar cells

B. Jagannathan, J. Yi, R. L. Wallace, 1994 .

Enabling RFCMOS solutions for emerging advanced applications

B. Jagannathan, P.E. Cottrell, Xudong Wang, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

Noise performance of a low base resistance 200 GHz SiGe technology

B. Jagannathan, S. Sweeney, D.R. Greenberg, 2002, Digest. International Electron Devices Meeting,.

SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications

B. Jagannathan, Choongyeun Cho, Jonghae Kim, 2007, 2007 IEEE Symposium on VLSI Technology.

Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

B. Jagannathan, Jing Wang, Yun Shi, 2007, 2007 IEEE Symposium on VLSI Technology.

Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications

B. Jagannathan, N. Loubet, P. Kulkarni, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Record RF performance of 45-nm SOI CMOS Technology

B. Jagannathan, Jonghae Kim, Sungjae Lee, 2007, 2007 IEEE International Electron Devices Meeting.

Record RF performance of sub-46 nm L/sub gate/ NFETs in microprocessor SOI CMOS technologies

B. Jagannathan, Sungjae Lee, L. Wagner, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Semiconductor technology choices for ultrawide-band (UWB) systems

B. Jagannathan, K. Newton, G. Freeman, 2005, 2005 IEEE International Conference on Ultra-Wideband.

A 150 GHz Amplifier With 8 dB Gain and $+$6 dBm $P_{\rm sat}$ in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines

Munkyo Seo, B. Jagannathan, M.J.W. Rodwell, 2009, IEEE Journal of Solid-State Circuits.

Lightweight, thin-film Si heterojunction solar cells

B. Jagannathan, Wayne A. Anderson, E. Klementieva, 1997 .

RF FET layout and modeling for design success in RFCMOS technologies

M. Erturk, D. Greenberg, B. Jagannathan, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

22nm technology yield optimization using multivariate 3D virtual fabrication

B. Jagannathan, S. Furkay, S. Narasimha, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

RF CMOS for microwave and mm-wave applications

B. Jagannathan, L. Wagner, D. Goren, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structure

H. Chen, B. Jagannathan, J. Johnson, 2001, IEEE Electron Device Letters.

40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology

B. Jagannathan, A. Rylyakov, M. Meghelli, 2001, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

A 17.1 to 17.3 GHz image-reject down-converter with phase-tunable LO using 3/spl times/ subharmonic injection locking

B. Jagannathan, B. Jagannathan, D. Harame, 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

D. Harame, B. Jagannathan, A. Rylyakov, 2004, IEEE Transactions on Microwave Theory and Techniques.

Device scaling and application trends for over 200GHz SiGe HBTs

B. Jagannathan, Jae-Sung Rieh, G. Freeman, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay

B. Jagannathan, M. Meghelli, G. Freeman, 2003, IEEE Electron Device Letters.

Using silicon-germanium mainstream BiCMOS technology for X-band and LMDS (25-30 GHz) microwave applications

B. Jagannathan, G. Freeman, K. Stein, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications

B. Jagannathan, J. Johnson, G. Freeman, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology

B. Jagannathan, M. Meghelli, S. Subbanna, 2002, IEEE Electron Device Letters.

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

B. Jagannathan, G. Freeman, J.-S. Rieh, 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..