I. Sankin

发表

Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

V. Bondarenko, M.S. Mazzola, R. Kelley, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

High-voltage (600 to 3 kV) silicon carbide diode development

Michael S. Mazzola, Jeffrey B. Casady, I. Sankin, 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications

M.S. Mazzola, L. Cheng, I. Sankin, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

CdTe Solar Cells at the Threshold to 20% Efficiency

I. Sankin, I. Sankin, M. Gloeckler, 2013, IEEE Journal of Photovoltaics.

1.74 mΩcm2, High-Voltage 4H-SiC Vertical-Channel JFETs for High-Power Applications

I. Sankin, W. Draper, M. Mazzola, 2006, 2006 64th Device Research Conference.

Power factor correction using an enhancement-mode SiC JFET

I. Sankin, W. Draper, M. Mazzola, 2008, 2008 IEEE Power Electronics Specialists Conference.