Donald L. Dorsey

Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs

Eric R. Heller, Sukwon Choi, Donald L. Dorsey, 2013, Microelectron. Reliab..

Semiempirical self consistent calculations of GaAs[III] surface reconstructions

Donald L. Dorsey, Shashikala Das, 1992, Other Conferences.

The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors

Samuel Graham, Eric R. Heller, Donald L. Dorsey, 2013 .

Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution

A. Thust, Kurt G. Eyink, Krishnamurthy Mahalingam, 2006 .

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

Samuel Graham, Eric R. Heller, Donald L. Dorsey, 2013 .