J. W. Adkisson

Monolithic Integration Of GaAs And Si Bipolar Devices For Optical Interconnect Systems

Bruce A. Wooley, James S. Harris, G. N. Nasserbakht, 1992, 1992 Proceedings of the IEEE Custom Integrated Circuits Conference.

Picosecond Pulsing And Sampling By GaAs Photodetectors Fabricated On Silicon Substrates

M. D. Pocha, Robert W. Dutton, Jeffrey D. Morse, 1989, Other Conferences.

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology

V. Jain, D. L. Harame, P. Cheng, 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

D. Harame, Vibhor Jain, Peng Cheng, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

A monolithic GaAs-on-Si receiver front end for optical interconnect systems

James S. Harris, Bruce A. Wooley, Theodore I. Kamins, 1993 .