Rinus T. P. Lee

发表

Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world

Richard Hill, Raj Jammy, C. Y. Kang, 2012, 2012 IEEE International Conference on IC Design & Technology.

High Voltage GaN Technology in a Silicon CMOS Environment: Challenges and Opportunities

H. Rusty Harris, Richard J. W. Hill, Rinus T. P. Lee, 2013 .

A reconfigurable electromagnetic interface to ease requirements on phased array common modules

A. P. Morris, Rinus T. P. Lee, R. S. Westafer, 2015, Defense + Security Symposium.

(Invited) Technology options to reduce contact resistance in Nanoscale III-V MOSFETs

Chris Hobbs, Alexey Vert, Wei-Yip Loh, 2015 .

Advanced Contact Technology for MOSFETs: Integration of New Materials for Series Resistance Reduction

Yee-Chia Yeo, Rinus T. P. Lee, 2009 .

Scaling Challenges for Advanced CMOS Devices

W LiebmannLars, Bill Taylor, Rinus T. P. Lee, 2017 .

Probing the ErSi1.7 Phase Formation by Micro-Raman Spectroscopy

Yee-Chia Yeo, Tsung-Yang Liow, Ganesh S. Samudra, 2007 .

Scaled Micro-Relay Structure with Low Strain Gradient for Reduced Operating Voltage

Rhesa Nathanael, Jaeseok Jeon, I-Ru Chen, 2012 .

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology

Gennadi Bersuker, Richard J. W. Hill, Rinus T. P. Lee, 2013, IEEE Transactions on Electron Devices.

Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Lee A. Walsh, Wei-Yip Loh, Rinus T. P. Lee, 2014 .

Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Lee A. Walsh, Rinus T. P. Lee, Greg Hughes, 2016 .

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As

Won Hyuck Choi, Michael Abraham, Rinus T. P. Lee, 2014 .

Ultra low contact resistivity (< 1×10−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure fabricated with III–V on Si substrates

P. Y. Hung, F. Khaja, K. Matthews, 2014, 2014 IEEE International Electron Devices Meeting.

Enhanced morphological stability of NiGe films formed using Ni(Zr) alloy

Rinus T. P. Lee, Bavani Balakrisnan, D. Chi, 2006 .

Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

Aras Norvilas, Joshua Herman, Alexey Vert, 2015 .