Akio Nishida

发表

Statistical-noise effect on power spectrum of line-edge and line-width roughness with long-range correlation

Atsushi Hiraiwa, Akio Nishida, 2011, Advanced Lithography.

Control Characteristics of Series Resonant Converter with Parallel Resonant Circuit under Parallel Resonant Frequency

Akio Nishida, Yoshiyuki Ishihara, Toshiyuki Todaka, 1994 .

Noise filtering of scanning-electron-microscope images for accurate analysis of line-edge and line-width roughness

Atsushi Hiraiwa, Akio Nishida, A. Hiraiwa, 2012 .

Ringing choke converter switching power supply unit

Akio Nishida, Koji Nakahira, Ryota Tani, 2001 .

High Reliability SRAM Development for 40nm Embedded Spilt Gate-MONOS

Akio Nishida, Yoshiyuki Kawashima, Masao Inoue, 2014 .

MOSFET-array for extracting parameters expressing SPICE-parameter variation

Akio Nishida, Kazuo Terada, Katsuhiro Tsuji, 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).

Statistically accurate analysis of line width roughness based on discrete power spectrum

Atsushi Hiraiwa, Akio Nishida, A. Hiraiwa, 2010, Advanced Lithography.

Scanning-electron-microscope image processing for accurate analysis of line-edge and line-width roughness

Atsushi Hiraiwa, Akio Nishida, A. Hiraiwa, 2012, Advanced Lithography.

Stabilised switching power supply circuit

Akio Nishida, Hiroshi Takemura, 2003 .

Variation; key issue of the advanced CMOS & LSI's

Akio Nishida, Toshiro Hiramoto, Shiro Kamohara, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Evaluation of MOSFET C-V curve variation using test structure for charge-based capacitance measurement

Tohru Mogami, Akio Nishida, Kazuo Terada, 2011, 2011 IEEE ICMTS International Conference on Microelectronic Test Structures.

Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

Akio Nishida, Toshiro Hiramoto, Shiro Kamohara, 2009 .

Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot

Akio Nishida, Toshiro Hiramoto, Takaaki Tsunomura, 2010 .

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

Tohru Mogami, Akio Nishida, Yasuyoshi Nagai, 2011 .

Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

Tohru Mogami, Akio Nishida, Toshiro Hiramoto, 2010 .

Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors

Akio Nishida, Toshiro Hiramoto, Kiyoshi Takeuchi, 2009 .

High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method

Tohru Mogami, Akio Nishida, Toshiro Hiramoto, 2011 .

Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal-Oxide-Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

Akio Nishida, Toshiro Hiramoto, Shiro Kamohara, 2009 .

Verification of Threshold Voltage Variation of Scaled Transistors with Ultralarge-Scale Device Matrix Array Test Element Group

Akio Nishida, Toshiro Hiramoto, Takaaki Tsunomura, 2009 .

Process Condition Dependence of Random V T Variability in NFETs and PFETs

Tohru Mogami, Akio Nishida, Toshiro Hiramoto, 2009 .