Anri Nakajima

发表

SILICON SINGLE-ELECTRON MEMORY USING ULTRA-SMALL FLOATING GATE

T. Futatsugi, Anri Nakajima, H. Nakao, 1998 .

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Naoki Yokoyama, Anri Nakajima, Kinjiro Kosemura, 1997 .

Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Naoto Horiguchi, Naoki Yokoyama, Tatsuya Usuki, 1998 .

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Anri Nakajima, Shiyang Zhu, Shiyang Zhu, 2005 .

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Shin Yokoyama, Hideo Sunami, Masataka Hirose, 2000 .

MICROSTRUCTURE AND OPTICAL ABSORPTION PROPERTIES OF SI NANOCRYSTALS FABRICATED WITH LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

Naoki Yokoyama, Yoshihiro Sugita, Anri Nakajima, 1996 .

Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si

Yasuo Nara, Yoshihiro Sugita, Anri Nakajima, 1993 .

Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Naoki Yokoyama, Anri Nakajima, Kinjiro Kosemura, 1997 .