N. A. F. Othman

The application of Taguchi method on the robust optimization of p-FinFET device parameters

N. Soin, N. A. F. Othman, F. N. N. Azhari, 2016, 2016 IEEE International Conference on Semiconductor Electronics (ICSE).

Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance

N. A. F. Othman, N. Soin, F. N. N. Azhari, 2018 .

Effect of gate recess variation on electrical characteristics and 2DEG transport of InGaAs high electron mobility transistors

N. A. F. Othman, N. Soin, S. Hatta, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Performance of 7nm stress-engineered nFinFETs based on stressors consideration for different channel material

N. A. F. Othman, N. Soin, S. F. Wan Muhammad Hatta, 2016, 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs

N. A. F. Othman, S. F. Wan Muhamad Hatta, N. Soin, 2016, IEEE Transactions on Electron Devices.

Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application

N. A. F. Othman, N. Soin, S. Hatta, 2017 .

Impact of Channel, Stress-Relaxed Buffer, and S/D Si1−xGex Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering

N. A. F. Othman, N. Soin, S. Hatta, 2018, Journal of Electronic Materials.

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

N. A. F. Othman, B. Benbakhti, N. Soin, 2019, Microelectronics International.