A. Scarpa

发表

Electrical and radiation tests of thin tunnel oxides

G. Crisenza, Alessandro Paccagnella, A. Rizzato, 1996 .

Process qualification strategy for advanced embedded non-volatile memory technology - the Philips 0.18 /spl mu/m embedded flash case

A. Scarpa, Guoqiao Tao, K. van Dijk, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Negative-bias temperature instability cure by process optimization

A. Scarpa, R. Campos, J. Dubois, 2006, IEEE Transactions on Electron Devices.

Strategies to cope with plasma charging damage in design and layout phases

A. Scarpa, J. Ackaert, Z. Wang, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

Fast-bit-limited lifetime modeling of advanced floating gate non-volatile memories

Jelke Dijkstra, A. Scarpa, Guoqiao Tao, 2000, 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515).

A new model of tunnelling current and SILC in ultra-thin oxides

A. Scarpa, G. Ghidini, A. Paccagnella, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Optimization of Interlevel Dielectrics for Embedded Nonvolatile Deep Submicrometer Technologies

P. Habas, A. Scarpa, Antonio Cacciato, 2005 .

Charge loss after /sup 60/Co irradiation on flash arrays

A. Scarpa, A. Paccagnella, G. Cellere, 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides

Alessandro Paccagnella, A. Scarpa, Gabriella Ghidini, 1999 .

Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

Alessandro Paccagnella, A. Scarpa, Gabriella Ghidini, 1998 .

Stress induced leakage current dependence on oxide thickness, technology and stress level

G. Ghibaudo, G. Pananakakis, A. Scarpa, 1997, 27th European Solid-State Device Research Conference.

Fast wafer level monitoring of stress induced leakage current in deep sub-micron embedded non-volatile memory processes

A. Scarpa, Guoqiao Tao, K. van Dijk, 2002, IEEE International Integrated Reliability Workshop Final Report, 2002..

Ionizing radiation induced leakage current on ultra-thin gate oxides

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 1997 .

Tail bit implications in advanced 2 transistors-flash memory device reliability

Jelke Dijkstra, A. Scarpa, Guoqiao Tao, 2001 .

Emerging oxide degradation mechanisms: stress induced leakage current (SILC) and quasi-breakdown (QB)

B. DeSalvo, Gerard Ghibaudo, G. Pananakakis, 1999 .

Electrically and radiation induced leakage currents in thin oxides

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 2000 .

Bake enhanced erratic behavior in gate stress characteristics in flash memories

A. Scarpa, Guoqiao Tao, D. Dormans, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

On the correlation between SILC and hole fluence throughout the oxide

Gerard Ghibaudo, G. Pananakakis, A. Scarpa, 1999 .

Charge loss after 60Co irradiation of flash arrays

A. Scarpa, A. Paccagnella, Giorgio Cellere, 2003 .

Effect of charge transport through silicon nitride on thin gate oxide reliability

A. Scarpa, A. Cacciato, A. Cacciato, 2002 .

Stress induced leakage current in ultra-thin gate oxides after constant current stress

Alessandro Paccagnella, Gerard Ghibaudo, G. Pananakakis, 1997 .