T. Roggenbauer
发表
Ronghua Zhu,
V. Parthasarathy,
V. Khemka,
2003,
ISPSD 2003.
V. P. Trivedi,
J. Kirchgessner,
D. Morgan,
2016,
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Ronghua Zhu,
V. Parthasarathy,
V. Khemka,
2002
.
Ronghua Zhu,
T. Roggenbauer,
A. Bose,
2007,
IEEE Transactions on Device and Materials Reliability.
V. Parthasarathy,
T. Roggenbauer,
V. Khemka,
2004
.
Ronghua Zhu,
T. Roggenbauer,
A. Bose,
2006,
IEEE Transactions on Device and Materials Reliability.
J. Nivison,
V. Parthasarathy,
T. Roggenbauer,
2002,
Digest. International Electron Devices Meeting,.
V. Parthasarathy,
T. Roggenbauer,
P. Hui,
2004,
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.
Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies
T. Roggenbauer,
A. Bose,
V. Khemka,
2006,
2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
V. Parthasarathy,
T. Roggenbauer,
A. Bose,
2004,
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.
V. Parthasarathy,
T. Roggenbauer,
A. Bose,
2004,
IEEE Transactions on Semiconductor Manufacturing.
A. Bose,
T. Roggenbauer,
V. Khemka,
2006,
2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
V. Parthasarathy,
T. Roggenbauer,
V. Khemka,
2003,
International Conference on Microelectronic Test Structures, 2003..
Ronghua Zhu,
V. Parthasarathy,
A. Bose,
2003,
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
V. Parthasarathy,
A. Bose,
T. Roggenbauer,
2004,
IEEE Transactions on Electron Devices.