Rakesh Lal

650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control

Zhan Wang, Kurt Smith, Primit Parikh, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

High Voltage GaN Switch Reliability FIT rates and PPM reliability based on standards from: Joint Electron Device Engineering Council (JEDEC), Automotive Electronics Council (AEC) and German Electrical and Electronic Manufacturers' Association (ZVEI)

Kurt Smith, Peter Smith, Elena Georgieva, 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Commercialization and reliability of 600 V GaN power switches

Peter Smith, Kurt Smith, Umesh K. Mishra, 2015, 2015 IEEE International Reliability Physics Symposium.

Applications and characterization of four quadrant GaN switch

Ghanshyamsinh Gohil, B. Jayant Baliga, Sayan Acharya, 2017, 2017 IEEE Energy Conversion Congress and Exposition (ECCE).

600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates

Primit Parikh, Toshihide Kikkawa, Kenji Imanishi, 2014, 2014 IEEE International Electron Devices Meeting.