J.P. Campbell

Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

J.S. Suehle, A. Oates, K. Sheng, 2009, 2009 IEEE International Conference on IC Design and Technology.

A fast, simple wafer-level Hall-mobility measurement technique

J.S. Suehle, J.P. Campbell, L.C. Yu, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

J.S. Suehle, A. Oates, K. Sheng, 2010, 2010 Symposium on VLSI Technology.

An improved fast Id-Vg measurement technology with expanded application range

J.S. Suehle, J.P. Campbell, L.C. Yu, 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

J.P. Campbell, J. Suehle, K. Sheng, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

An Ultra-fast Multi-level MoTe2-based RRAM

A. V. Davydov, J.P. Campbell, A. Shakouri, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Random telegraph noise in highly scaled nMOSFETs

J.P. Campbell, L.C. Yu, J. Suehle, 2009, 2009 IEEE International Reliability Physics Symposium.

The fast initial threshold voltage shift: NBTI or high-field stress

J.P. Campbell, K.P. Cheung, J.S. Suehle, 2008, 2008 IEEE International Reliability Physics Symposium.

NBTI: An Atomic-Scale Defect Perspective

S. Krishnan, A.T. Krishnan, J.P. Campbell, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Electron trapping: An unexpected mechanism of NBTI and its implications

J.P. Campbell, K.P. Cheung, J.S. Suehle, 2008, 2008 Symposium on VLSI Technology.