J. S. Speck

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

B. S. Ooi, J. T. Leonard, E. C. Young, 2016, SPIE OPTO.

Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

U. K. Mishra, J. S. Speck, N. Killat, 2012 .

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

U. K. Mishra, Nidhi, J. S. Speck, 2012, IEEE Electron Device Letters.

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

S. Kolluri, S. P. DenBaars, U. K. Mishra, 2012, IEEE Electron Device Letters.

Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

U. K. Mishra, S. A. Ringel, J. S. Speck, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

U. K. Mishra, J. S. Speck, S. Keller, 1995 .

Toward a physical understanding of the reliability-limiting EC-0.57 eV trap in GaN HEMTs

S. Keller, U. K. Mishra, D. W. Cardwell, 2014, 2014 IEEE International Reliability Physics Symposium.

High speed devices

P. Asbeck, S. Mookerjea, D. Ritter, 2010, 68th Device Research Conference.

N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications

U. K. Mishra, Nidhi, J. S. Speck, 2011, IEEE Electron Device Letters.