Scheffler

发表

Rejuvenating the A 4 motorway... thermorecycling on the slow lane

C Paillard, C Basset, Q Hantzo, 1994 .

Self-Assembly of Trisoligonucleotidyls: The Case for Nano-Acetylene and Nano-Cyclobutadiene.

Scheffler, Dorenbeck, Jordan, 1999, Angewandte Chemie.

Frustrated H-induced instability of Mo(110).

Wilke, Scheffler, Kohler, 1994, Physical review letters.

Evidence for site-sensitive screening of core holes at the Si and Ge (001) surface.

Scheffler, Pehlke, E. Pehlke, 1993, Physical review letters.

Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111).

Scheffler, M. Scheffler, Neugebauer, 1992, Physical review. B, Condensed matter.

Negative thermal expansion of diamond and zinc-blende semiconductors.

Scheffler, Biernacki, Matthias Scheffler, 1989, Physical review letters.

Phonon- versus electron-mediated desorption and oxidation of CO on Ru(0001)

Bonn, Wolf, Scheffler, 1999, Science.

Ab initio calculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growth.

Scheffler, Stumpf, 1996, Physical review. B, Condensed matter.

Ghost states for separable, norm-conserving, Iab initioP pseudopotentials.

Scheffler, Gonze, Käckell, 1990, Physical review. B, Condensed matter.

Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons.

Scheffler, Methfessel, Fiorentini, 1993, Physical review. B, Condensed matter.

Trends of the surface relaxations, surface energies, and work functions of the 4d transition metals.

Scheffler, Methfessel, Hennig, 1992, Physical review. B, Condensed matter.

Analysis of separable potentials.

Scheffler, Stumpf, X. Gonze, 1991, Physical review. B, Condensed matter.

Theory of self-diffusion at and growth of Al(111).

Scheffler, Stumpf, 1994, Physical review letters.

GaAs(001) surface under conditions of low As pressure: evidence for a novel surface geometry

Lee, Scheffler, Moritz, 2000, Physical review letters.

Total-energy gradients and lattice distortions at point defects in semiconductors.

Scheffler, M. Scheffler, J. Vigneron, 1985, Physical review. B, Condensed matter.

Island nucleation in thin-film epitaxy: A first-principles investigation

Scheffler, Fichthorn, 2000, Physical review letters.

Mechanisms of island formation of alkali-metal adsorbates on Al(111).

Scheffler, Neugebauer, 1993, Physical review letters.

Reconstruction mechanism of fcc transition metal (001) surfaces.

Scheffler, Methfessel, Fiorentini, 1993, Physical review letters.

Identification of stable and metastable adsorption sites of K adsorbed on Al(111).

Adams, Scheffler, Moritz, 1992, Physical review letters.

Effect of the environment on alpha-Al2O3 (0001) surface structures

Scheffler, A. Chaka, Wang, 2000, Physical review letters.

Theory of adsorption and surfactant effect of Sb on Ag(111).

Scheffler, Oppo, Fiorentini, 1993, Physical review letters.

Surface core-level shifts of some 4d-metal single-crystal surfaces: Experiments and ab initio calculations.

Lundgren, Scheffler, E. Lundgren, 1994, Physical review. B, Condensed matter.

Local Isoelectronic Reactivity of Solid Surfaces.

Wilke, Scheffler, Cohen, 1996, Physical review letters.

Theoretical evidence for an optically inducible structural transition of the isolated As antisite in GaAs: Identification and explanation of EL2?

Scheffler, Dabrowski, Matthias Scheffler, 1988, Physical review letters.

Reconstruction mechanism of fcc transition metal (001) surfaces.

Scheffler, Methfessel, Fiorentini, 1993, Physical review letters.

Electronic and magnetic structure of 3d-transition-metal point defects in silicon calculated from first principles.

Scheffler, Andersen, Beeler, 1990, Physical review. B, Condensed matter.

Isolated arsenic-antisite defect in GaAs and the properties of EL2.

Scheffler, Dabrowski, Matthias Scheffler, 1989, Physical review. B, Condensed matter.

Vacancy-formation energies at the (111) surface and in bulk Al, Cu, Ag, and Rh.

Scheffler, Methfessel, Polatoglou, 1993, Physical review. B, Condensed matter.

Green-function theory of scanning tunneling microscopy: Tunnel current and current density for clean metal surfaces.

Scheffler, Doyen, Drakova, 1993, Physical review. B, Condensed matter.

Structure and Stability of a High-Coverage (1 x 1) Oxygen Phase on Ru(0001).

Scheffler, Ertl, Stampfl, 1996, Physical review letters.

Adlayer core-level shifts of admetal monolayers on transition-metal substrates and their relation to the surface chemical reactivity.

M. V. Ganduglia-Pirovano, Scheffler, Hennig, 1995, Physical review. B, Condensed matter.

Potential-energy surface for H2 dissociation over Pd(100).

Wilke, Scheffler, 1995, Physical review. B, Condensed matter.

Six-dimensional quantum dynamics of adsorption and desorption of H2 at Pd(100): Steering and steric effects.

Wilke, Scheffler, Gross, 1995, Physical review letters.

Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons.

Scheffler, Methfessel, Fiorentini, 1992, Physical review. B, Condensed matter.

Theory of adsorption and surfactant effect of Sb on Ag(111).

Scheffler, Oppo, Fiorentini, 1993, Physical review letters.

High-dimensional quantum dynamics of adsorption and desorption of H2 at Cu(111).

Scheffler, Gross, Hammer, 1994, Physical review letters.

Atomic and magnetic structure of fcc Fe/Cu(100).

Marcus, Scheffler, Kraft, 1994, Physical review. B, Condensed matter.

Frustrated H-induced instability of Mo(110).

Wilke, Scheffler, Kohler, 1994, Physical review letters.

Comment on "Local exchange-correlation functional: Numerical test for atoms and ions"

Scheffler, Kohler, Fuchs, 1994, Physical review. A, Atomic, molecular, and optical physics.

GaAs equilibrium crystal shape from first principles.

Scheffler, M. Scheffler, Pehlke, 1996, Physical review. B, Condensed matter.

Formation and structural analysis of a surface alloy: Al(111)-(2 x 2)-Na.

Adams, Lundgren, Scheffler, 1995, Physical review letters.

Chemical trends and bonding mechanisms for isloated adsorbates on Al(111).

Scheffler, Neugebauer, Bormet, 1994, Physical review. B, Condensed matter.

Hubbard correlations and charge transfer at the GaAs(110) surface with alkali adsorbates.

Scheffler, Pankratov, 1993, Physical review letters.

Scattering of rare-gas atoms at a metal surface: Evidence of anticorrugation of the helium-atom potential energy surface and the surface electron density.

Wilke, Scheffler, Kohler, 1995, Physical review letters.

Local Chemical Reactivity of a Metal Alloy Surface.

Scheffler, B. Hammer, M. Scheffler, 1995, Physical review letters.

Bound bipolaron at the surface: The negative-U behavior of GaAs(110) with adsorbed alkali metals.

Scheffler, Pankratov, 1993, Physical review letters.

Self-consistent pseudopotential calculations for sodium adsorption on GaAs(110).

Scheffler, Hebenstreit, 1992, Physical review. B, Condensed matter.

Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes.

Scheffler, Heinemann, Hebenstreit, 1991, Physical review letters.

Island nucleation in thin-film epitaxy: A first-principles investigation

Scheffler, M. Scheffler, K. Fichthorn, 2000, Physical review letters.

Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon.

Scheffler, Weinert, Overhof, 1991, Physical review. B, Condensed matter.

Anisotropy of Growth of the Close-Packed Surfaces of Silver.

Scheffler, Yu., 1996, Physical review letters.

Elastic constants of Cu and the instability of its bcc structure.

Marcus, Scheffler, Methfessel, 1993, Physical review. B, Condensed matter.

Ab initio pseudopotential study of Fe, Co, and Ni employing the spin-polarized LAPW approach.

Cho, Scheffler, 1995, Physical review. B, Condensed matter.

Theoretical study of O adlayers on Ru(0001).

Scheffler, Stampfl, 1995, Physical review. B, Condensed matter.

Experimental and theoretical investigation of the electronic structure of silver deposited onto InSb(110) at 10 K.

Scheffler, Aristov, Jacobi, 1993, Physical review. B, Condensed matter.

Multidimensional potential energy surface for H2 dissociation over Cu(111).

Scheffler, Jacobsen, J. Nørskov, 1994, Physical review letters.

Localized excitons and breaking of chemical bonds at III-V (110) surfaces.

Scheffler, Pankratov, 1995, Physical review letters.

Calculated atomic structures and electronic properties of GaP, InP, GaAs, and InAs (110) surfaces.

Scheffler, Alves, Hebenstreit, 1991, Physical review. B, Condensed matter.

Deep levels in hafnium- and zirconium-doped indium phosphide.

Baber, Scheffler, Bimberg, 1995, Physical review. B, Condensed matter.

Ab initio calculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growth.

Scheffler, Stumpf, 1994, Physical review. B, Condensed matter.

Anion-antisite-like defects in III-V compounds.

Scheffler, Dabrowski, Caldas, 1990, Physical review letters.

Theory of adsorption and desorption of H2 /Si(001).

Scheffler, Pehlke, 1994, Physical review letters.

Application of generalized gradient approximations: The diamond- beta -tin phase transition in Si and Ge.

Scheffler, Fuchs, Pehlke, 1995, Physical Review B (Condensed Matter).

Field effect on electron emission from the deep Ti donor level in InP.

Baber, Wolf, Scheffler, 1992, Physical review. B, Condensed matter.

Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As.

Scheffler, Bimberg, Srocka, 1994, Physical review. B, Condensed matter.

Identification of chalcogen point-defect sites in silicon by total-energy calculations.

Scheffler, Jepsen, Gunnarsson, 1985, Physical review letters.

Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon.

Scheffler, Andersen, Beeler, 1985, Physical review letters.

Atomic Structure of the Stoichiometric GaAs(114) Surface.

Scheffler, Márquez, Jacobi, 2001, Physical review letters.

Gross and Scheffler Reply.

Scheffler, Gross, 1996, Physical review letters.

Mechanism of poisoning the catalytic activity of Pd(100) by a sulfur adlayer.

Wilke, Scheffler, 1996, Physical review letters.

Mechanisms of defect pairing in semiconductors: A study for chalcogens in silicon.

Scheffler, Weinert, 1987, Physical review letters.

Site-selective adsorption of C atoms on Al(111) surfaces.

Scheffler, Stumpf, Hafner, 1995, Physical review letters.