E. De Backer

I3T80: a 0.35 /spl mu/m based system-on-chip technology for 42 V battery automotive applications

P. Moens, F. De Pestel, L. Delobel, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

Surface Roughness Enhanced Current in Defectively Stressing Poly-Oxide-Poly Capacitors

S. Boonen, D. Wojciechowski, Lieyi Sheng, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.

Plasma damage in HIMOS/spl trade/ non-volatile memories (NVM)

T. Yao, L. Haspeslagh, S. Boonen, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Innovating SRAM Design for Fast Process Related Defect Recognition and Failure Analysis

P. Coppens, G. Vanhorebeek, E. De Backer, 1999, 29th European Solid-State Device Research Conference.

A high-speed silicon FET for efficient DC-DC power conversion

P. Coppens, F. Bauwens, F. De Pestel, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric

P. Gassot, M. Tack, P. Moens, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit

M. Tack, P. Moens, F. Bauwens, 2006, 2006 International Electron Devices Meeting.

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, 7th International Symposium on Plasma- and Process-Induced Damage.

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).