Yoshihisa Fujisaki

Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb (Zr, Ti) O~3 Thin Film Capacitors with IrO~2 Top Electrode

Yasuhiro Shimamoto, Yoshihisa Fujisaki, K. Kushida Abdelghafar, 1998 .

Resistive-switching Solid-state Brain-neocortex-like Device for Advanced Non-volatile Logic Applications

Yoshihisa Fujisaki, Motoyasu Terao, Masaharu Kinoshita, 2009 .

Materials and physics for nonvolatile memories : symposium held April 14-17, 2009, San Francisco, California, U.S.A.

Tingkai Li, Rainer Waser, Yoshihisa Fujisaki, 2009 .

A scalable single-transistor/single-capacitor memory cell structure characterized by an angled-capacitor layout for megabit FeRAMs

Yoshihisa Fujisaki, Kazuyoshi Torii, H. Yamashita, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Pt/TiN electrodes for stacked memory with polysilicon plug utilizing PZT films

Yoshihisa Fujisaki, Kazuyoshi Torii, Masahiko Hiratani, 1996 .

H2 DAMAGE OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILM CAPACITORS : THE ROLE OF CATALYTIC AND ADSORPTIVE ACTIVITY OF THE TOP ELECTRODE

Yasuhiro Shimamoto, Yoshihisa Fujisaki, Hiroshi Miki, 1997 .

Current Status of Nonvolatile Semiconductor Memory Technology

Yoshihisa Fujisaki, Y. Fujisaki, 2010 .

Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film

Yoshihisa Fujisaki, Hiroshi Miki, Kazuyoshi Torii, 1999 .

Resistive Switching Ion-Plug Memory for 32-nm Technology Node and Beyond

Yoshihisa Fujisaki, Motoyasu Terao, Kenzo Kurotsuchi, 2009 .

Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors

Yoshihisa Fujisaki, Hiroshi Miki, Kazuyoshi Torii, 1996 .

Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors

Yoshihisa Fujisaki, Hideo Miura, Yuichi Matsui, 1998 .