Pei-Jer Tzeng

Physical and reliability characteristics of Hf-based gate dielectrics on strained-Si/sub 1-x/Ge/sub x/ MOS devices

Pei-Jer Tzeng, S. Maikap, Peng-Shiu Chen, 2005, IEEE Transactions on Device and Materials Reliability.

Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

Pei-Jer Tzeng, Yi-Yuan Chang, Kuei-Shu Chang-Liao, 2001, IEEE Electron Device Letters.