Takeo Shiba

发表

Printed Organic D-Flipflops based on Compact Circuit Design

Hiroyuki Matsui, Shizuo Tokito, Rei Shiwaku, 2016 .

29 ps ECL circuits using U-groove isolated SICOS technology

Yoichi Tamaki, Tokuo Kure, Takashi Kobayashi, 1989, International Technical Digest on Electron Devices Meeting.

Novel high-performance TFTs fabricated by selectively enlarging laser x'tallization (SELAX) technology

Shinya Yamaguchi, Takeo Shiba, Mutsuko Hatano, 2003, IS&T/SPIE Electronic Imaging.

Process and device technologies for high speed self-aligned bipolar transistors

Noriyuki Homma, Katsuyoshi Washio, Takahiro Onai, 1995 .

43.3: Integration of Reliability with High Current Drivability by using SELAX Technology for High-Resolution (>300 ppi) System-in-Displays

Yoshiaki Toyota, Takeo Shiba, Mutsuko Hatano, 2005 .

SPOTEC-a sub-10- mu m/sup 2/ bipolar transistor structure using fully self-aligned sidewall polycide base technology

Fumio Murai, Tokuo Kure, Takahiro Onai, 1991, International Electron Devices Meeting 1991 [Technical Digest].

12.4: Late-News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly-Si TFTs

Takeo Shiba, Mutsuko Hatano, Makoto Ohkura, 2002 .

In situ phosphorus-doped polysilicon emitter technology for very high-speed, small emitter bipolar transistors

K. Ohnishi, Takeo Shiba, Y. Tamaki, 1996 .

High‐mobility solution‐processed organic thin‐film transistor array for active‐matrix color liquid‐crystal displays

Toshihide Kamata, Masahiro Kawasaki, Sei Uemura, 2008 .

Mechanism of device degradation under AC stress in low-temperature polycrystalline silicon TFTs

Yoshiaki Toyota, Takeo Shiba, Makoto Ohkura, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base

Toshiyuki Kikuchi, Takeo Shiba, Yukihiro Kiyota, 1995 .

A 0.5- mu m very-high-speed silicon bipolar devices technology U-groove-isolated SICOS

Yoichi Tamaki, Tokuo Kure, Takeo Shiba, 1991 .

U-Groove Isolation Technology for High Density Bipolar LSI's

Yoichi Tamaki, Tokuo Kure, Hisayuki Higuchi, 1982 .

Ultra-small high-speed bipolar transistor with sidewall silicide technology

Yoichi Tamaki, Noriyuki Homma, Takahiro Onai, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

P‐6: A Design Robust Against Hot‐carrier Stress for Low‐temperature Poly‐Si TFT LCDs Fabricated using a 450°C Process

Yoshiaki Toyota, Toshio Miyazawa, Takeo Shiba, 2002 .