N. I. Cameron

Pseudomorphic HEMT small signal equivalent circuit model scaling

S. P. Beaumont, M.R.S. Taylor, Helen McLelland, 1994 .

Design of a properly scaled 100 nm pseudomorphic HEMT using H2F

Asen Asenov, S. P. Beaumont, John R. Barker, 1995 .

Metamorphic GaAs HEMTs with fT of 200 GHz

S. P. Beaumont, M.R.S. Taylor, Helen McLelland, 1999 .

Reduced short channel effects in selectively dry gate recessed P-doped buffered pseudomorphic HEMTs

Asen Asenov, S. P. Beaumont, M.R.S. Taylor, 1994 .

Very high volume production of GaAs MMICs

C. M. Snowden, N. I. Cameron, 2000, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534).

Selective reactive ion etching of GaAs/AlGaAs metal‐semiconductor field effect transistors

S. P. Beaumont, Iain G. Thayne, Martin Holland, 1991 .

Metamorphic GaAs HEMTs with f/sub T/ of 200 GHz

M.R.S. Taylor, Helen McLelland, I. G. Thayne, 1999 .