Peter Deák

发表

SLABCC: Total energy correction code for charged periodic slab models

Meisam Farzalipour Tabriz, Bálint Aradi, Thomas Frauenheim, 2019, Comput. Phys. Commun..

Computer Simulation of Materials at Atomic Level with CD-ROM

Thomas Frauenheim, Peter Deák, Mark R. Pederson, 2000 .

Quantum Mechanical Studies of Boron Clustering in Silicon

Peter Deák, Adam Gali, Peter Pichler, 2006, High Performance Computing in Science and Engineering.

The mechanism of defect creation and passivation at the SiC/SiO2 interface

Thomas Frauenheim, Peter Deák, Adam Gali, 2007 .

Cyclic cluster model for calculating defects in solids using the local density approximation

Peter Deák, Christopher P. Ewels, József Miró, 1997 .

Calculation ofthe transitions and migration of nitrogen and vacancy related defects,with implications on the formation of NV centers in bulk diamond

Bálint Aradi, Thomas Frauenheim, Peter Deák, 2013, 1311.6598.

Oxygen in Silicon

Peter Deák, James W. Corbett, L. C. Snyder, 1991 .

Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

Peter Deák, Adam Gali, Jan M. Knaup, 2005 .

The mechanism of defect creation and passivation at the SiC/SiO2 interface

Thomas Frauenheim, Peter Deák, Adam Gali, 2007 .

Ion beam mass spectrometer for compositional analysis of plasma assisted surface processes in the pressure range of 1–50 mbar

Peter Deák, L. Geelhaar, G. Hárs, 1999 .

Defects of the SiC/SiO2 interface: energetics of the elementary steps of the oxidation reaction

Peter Deák, Adam Gali, Jan M. Knaup, 2003 .

Theoretical study of the mechanism of dry oxidation of 4H-SiC

Thomas Frauenheim, Peter Deák, Adam Gali, 2005 .