C. Caillat

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors

Naoto Horiguchi, Eddy Simoen, Aaron Thean, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks

Naoto Horiguchi, Aaron Thean, Guido Groeseneken, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

Anabela Veloso, Marc Aoulaiche, Cor Claeys, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).