F. Laruelle

High reliability level on single-mode 980nm-1060 nm diode lasers for telecommunication and industrial applications

J. Van de Casteele, M. Bettiati, F. Laruelle, 2008, SPIE LASE.

10 Gb/s 100 km transmission up to 80 C over single mode fiber at 1.55 μm with an integrated electro-absorption modulator laser

F. Laruelle, J.-R. Burie, G. Glastre, 2007, OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference.

Very high power operation of 980 nm single-mode InGaAs/AlGaAs pump lasers

M. Bettiati, F. Laruelle, V. Cargemel, 2006, SPIE LASE.

Reliable pulsed-operation of 1064-nm wavelength-stabilized diode lasers at high-average-power: boosting fiber lasers from the seed

F. Laruelle, P. Pagnod-Rossiaux, P. Garabedian, 2010, LASE.

Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement

L. Béchou, Y. Deshayes, Simon Joly, 2014, Photonics Europe.

Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes

Nathalie Labat, M. Bettiati, F. Laruelle, 2015, Microelectron. Reliab..

Extremely low losses 14xx single mode laser diode leading to 550-mW output power module with 0-75°C case temperature and 10-W consumption

M. Bettiati, F. Laruelle, P. Pagnod-Rossiaux, 2012, Photonics West - Lasers and Applications in Science and Engineering.

Extended temperature (−40/+90°C) Ultra Low Power consumption with high average output power (>+3 dBm) 1.55μm TOSA module for up to 11.3 Gb/s 100 km dispersion compensation free transmission Metro applications

F. Laruelle, P. Pagnod-Rossiaux, E. Grard, 2012, OFC/NFOEC.

Reaching 1 watt reliable output power on single-mode 980 nm pump lasers

M. Bettiati, F. Laruelle, V. Cargemel, 2009, LASE.

Single photon emission from individual GaAs quantum dots

F. Laruelle, Jean-Michel Gérard, Antonella Cavanna, 2003 .

Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation

F. Laruelle, James L. Merz, Pierre Petroff, 1990 .

Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures

F. Laruelle, James L. Merz, M. Tsuchiya, 1990 .