Hiroaki Oizumi

发表

Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Toshiro Itani, Takahiro Kozawa, Seiichi Tagawa, 2011, Advanced Lithography.

Three-aspherical-mirror system for EUV lithography

Takeo Watanabe, Hiroaki Oizumi, Masaaki Ito, 1998, Advanced Lithography.

Relationships between EUV resist outgassing and contamination deposition at Selete

Kazuyuki Matsumaro, Julius Joseph Santillan, Toshiro Itani, 2011, Advanced Lithography.

Atomic hydrogen cleaning of Ru-capped EUV multilayer mirror

Iwao Nishiyama, Akira Izumi, Hiroaki Oizumi, 2007, SPIE Advanced Lithography.

Printability of contact-hole patterns in EUVL using 0.3-NA HiNA optics

Yuusuke Tanaka, Iwao Nishiyama, Yukiko Kikuchi, 2006, SPIE Advanced Lithography.

Evaluation of resolution and LER in the resist patterns replicated by EUV microexposure tools

Yuusuke Tanaka, Iwao Nishiyama, Yukiko Kikuchi, 2006, SPIE Advanced Lithography.

Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification

Yuko Tsuchiya, Takashi Hattori, Atsuko Yamaguchi, 1999, Advanced Lithography.

193nm high power lasers for the wide bandgap material processing

Junichi Fujimoto, Hiroaki Oizumi, Takashi Matsunaga, 2017, LASE.

An analysis of EUV-resist outgassing measurements

Iwao Nishiyama, Takeo Watanabe, Hiroaki Oizumi, 2007, SPIE Advanced Lithography.

Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Toshiro Itani, Takahiro Kozawa, Seiichi Tagawa, 2010, Advanced Lithography.

Fabrication of aspherical mirrors for HiNA (high numerical aperture EUV exposure tool) set-3 projection optics

Hiroaki Oizumi, Hiroyuki Kondo, Shinji Okazaki, 2004, SPIE Advanced Lithography.

Mechanism of photoresist shrinkage investigated by single-line scan of electron beam

Takeyoshi Ohashi, Hiroki Kawada, Junichi Tanaka, 2012, Advanced Lithography.

EUV resist outgassing quantification and application

Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani, 2009, Advanced Lithography.

Ultimate fine-pitch resist patterning using the ASET-HINA

Iwao Nishiyama, Hiroaki Oizumi, Fumiaki Kumasaka, 2006, SPIE Advanced Lithography.

Evaluations of EUV resist outgassing by gas chromatography mass spectrometry (GC-MS)

Kazuyuki Matsumaro, Julius Joseph Santillan, Toshiro Itani, 2010, Advanced Lithography.

Current benchmarking results of EUV resist at Selete

Koji Kaneyama, Daisuke Kawamura, Toshiro Itani, 2008, Lithography Asia.

Development status of EUV resist materials and processing at Selete

Koji Kaneyama, Toshiro Itani, Hiroaki Oizumi, 2011, Advanced Lithography.

High peak power DUV laser processing

Taisuke Miura, Junichi Fujimoto, Hiroaki Oizumi, 2020, LASE.

Resist evaluation for EUV application at ASET

Yuusuke Tanaka, Iwao Nishiyama, Yukiko Kikuchi, 2007, SPIE Advanced Lithography.

Development of illumination optics and projection optics for high-NA EUV exposure tool (HiNA)

Kazuya Ota, Iwao Nishiyama, Hiroaki Oizumi, 2003, SPIE Advanced Lithography.

Development of high coherence high power 193nm laser

Zhigang Zhao, Satoshi Tanaka, Hiroaki Oizumi, 2016, SPIE LASE.

Development of resist material and process for hp-2x-nm devices using EUV lithography

Koji Kaneyama, Kazuyuki Matsumaro, Julius Joseph Santillan, 2010, Advanced Lithography.

Fabrication of aspherical mirrors for EUV projection optics set-3 of HiNA

Iwao Nishiyama, Hiroaki Oizumi, Shinji Okazaki, 2004, SPIE Optics + Photonics.

Sub-32nm patterning using EUVL at ASET

Yuusuke Tanaka, Iwao Nishiyama, Yukiko Kikuchi, 2006, SPIE Advanced Lithography.

Contamination removal from EUV multilayer using atomic hydrogen generated by heated catalyzer

Atsushi Masuda, Iwao Nishiyama, Hiroaki Oizumi, 2005, SPIE Advanced Lithography.

Control of line edge roughness of ultrathin resist films subjected to EUV exposure

Man-Hyoung Ryoo, Hiroaki Oizumi, Ei Yano, 2001, SPIE Advanced Lithography.

Performance of EUV molecular resists based on fullerene derivatives

Koji Kaneyama, Julius Joseph Santillan, Toshiro Itani, 2011, Advanced Lithography.

DUV high power lasers processing for glass and CFRP

Junichi Fujimoto, Hiroaki Oizumi, Hakaru Mizoguchi, 2017, Optics + Optoelectronics.

Development of EUV resists based on various new materials

Koji Kaneyama, Kazuyuki Matsumaro, Julius Joseph Santillan, 2010, Advanced Lithography.

Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning

Yasushi Nishiyama, Osamu Suga, Kazuki Abe, 2008, SPIE Advanced Lithography.

High power DUV lasers for material processing

Hakaru Mizoguchi, Junichi Fujimoto, Hiroaki Oizumi, 2016, SPIE/COS Photonics Asia.

Evaluation of pattern fidelity in EUVL using a high-numerical-aperture small-field EUV exposure tool (HiNA)

Yuusuke Tanaka, Iwao Nishiyama, Naoya Hayashi, 2005, SPIE Advanced Lithography.

Adamantane-based molecular glass resist for 193-nm lithography and beyond

Shinji Tanaka, Iwao Nishiyama, Hiroaki Oizumi, 2008, SPIE Advanced Lithography.

Development of novel positive-tone resists for EUVL

Iwao Nishiyama, Takeo Watanabe, Hiroaki Oizumi, 2008, SPIE Advanced Lithography.

Prevention of Resist Pattern Collapse by Resist Heating during Rinsing

Fumio Murai, Hiroaki Oizumi, Takashi Soga, 1994 .

Advancements in EUV Resist Materials and Processing

Koji Kaneyama, Daisuke Kawamura, Hiroaki Oizumi, 2009 .

Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors

Hiroaki Oizumi, Masaaki Ito, Hiromasa Yamanashi, 1998 .

Electroplated Reflection Masks for Soft X-Ray Projection Lithography

Hiroaki Oizumi, Sumito Shimizu, Katsuhiko Murakami, 1995 .

Relationship between Chemical Gradient and Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resist

Toshiro Itani, Takahiro Kozawa, Seiichi Tagawa, 2010 .

Depth profile analysis of chemically amplified resist by using TOF-SIMS with gradient shaving preparations

Hiroaki Oizumi, N. Nagai, H. Oizumi, 2004 .

Acid generation efficiency in a model system of chemically amplified extreme ultraviolet resist

Iwao Nishiyama, Takahiro Kozawa, Seiichi Tagawa, 2006 .

Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region

Hiroaki Oizumi, Ei Yano, David A. Dixon, 1999 .

Attenuated phase-shift mask for line patterns in EUV lithography

Iwao Nishiyama, Hiroaki Oizumi, Hiromasa Yamanashi, 2003 .

LER evaluation of molecular resist for EUV lithography

Iwao Nishiyama, Daiju Shiono, Hiroaki Oizumi, 2007 .

Novel Noria (Water Wheel-Like Cyclic Oligomer) Derivative as a Chemically Amplified Extreme Ultraviolet (EUV)-Resist Material

Hiroaki Oizumi, Tadatomi Nishikubo, Yuji Suyama, 2009 .

Theoretical estimation of absorption coefficients of various polymers at 13 nm

Hiroaki Oizumi, Ei Yano, Shinji Okazaki, 2000 .

Sub-0.1 µm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography

Takao Taguchi, Hiroaki Oizumi, Katsuhiko Murakami, 1993 .

Evaluation of the Outgassing from Resists at the EUV Wavelength

Iwao Nishiyama, Man-Hyoung Ryoo, Hiroaki Oizumi, 2001 .

Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process

Hiroaki Oizumi, Toshihiko Tanaka, Mitsuaki Morigami, 1994 .

P‐25: Super Low Temperature Doping of Phosphorus to Poly‐Si Thin Films Using XeF Excimer Laser Irradiation in Phosphoric Acid Solution

Hiroaki Oizumi, Tatsuo Okada, Daisuke Nakamura, 2016 .

Development of projection optics set-3 for high-numerical-aperture extreme ultraviolet exposure tool (HiNA)

Iwao Nishiyama, Hiroaki Oizumi, Shinji Okazaki, 2004 .

Theoretical Estimation of Absorption Coefficients of Various Polymers at 13nm

Hiroaki Oizumi, Ei Yano, Shinji Okazaki, 1999 .

X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist

Hiroaki Oizumi, Takashi Soga, Ryoko Yamanaka, 1995 .

Fabrication of 0.1 µm Line-and-Space Patterns using Soft X-Ray Reduction Lithography

Takao Taguchi, Hiroaki Oizumi, Katsuhiko Murakami, 1994 .

Reconstruction of Latent Images from Dose-Pitch Matrices of Line Width and Edge Roughness of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Toshiro Itani, Takahiro Kozawa, Seiichi Tagawa, 2010 .

Estimation of diffusion lengths of acid and quencher in chemically amplified resist on the basis of extreme ultraviolet exposure results

Yuusuke Tanaka, Iwao Nishiyama, Doo-Hoon Goo, 2007 .

Soft X-ray projection imaging with multilayer reflection masks

Eiji Takeda, Hiroaki Oizumi, Masaaki Ito, 1995 .

Freeze-Drying Process to Avoid Resist Pattern Collapse

Hiroaki Oizumi, Toshihiko Tanaka, H. Oizumi, 1993 .

EUV resist outgassing release characterization and analysis

Julius Joseph Santillan, Toshiro Itani, Hiroaki Oizumi, 2009 .

Progress of resist materials and process for hp 2x-nm devices using EUV lithography

Koji Kaneyama, Kazuyuki Matsumaro, Julius Joseph Santillan, 2010 .

Resist Parameter Extraction from Line-and-Space Patterns of Chemically Amplified Resist for Extreme Ultraviolet Lithography

Toshiro Itani, Takahiro Kozawa, Seiichi Tagawa, 2010 .