Yoshiji Horikoshi

发表

Operating Principle and Integration of In-Plane Gate Logic Devices

Yuji Komatsuzaki, K. Saba, Koji Onomitsu, 2011 .

Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes

Yoshiji Horikoshi, 1983, Optics & Photonics.

Operating principle and integration of in-plane gate logic devices

Yuji Komatsuzaki, K. Saba, Koji Onomitsu, 2011 .

Effect of indium replacement by gallium on the energy gaps of InAs/GaAs thin‐layer structures

Yoshiji Horikoshi, Y. Horikoshi, Michio Sato, 1991 .

Advanced epitaxial growth techniques : atomic layer epitaxy and migration-enhanced epitaxy

Yoshiji Horikoshi, Y. Horikoshi, 1999 .

Noise Performance of 1.3 µm InGaAsP Avalanche Photodiode at -190°C

Yoshiji Horikoshi, Yoshifumi Takanashi, 1980 .

Accelerated Life Test of AlGaAs-GaAs DH Lasers

Yasuo Seki, Koichi Wakita, Yoshiji Horikoshi, 1977 .

Properties of InP Films Grown by Organometallic VPE Method

Takashi Fukui, Yoshiji Horikoshi, T. Fukui, 1980 .

Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy

Yoshiji Horikoshi, Kazuhiko Nozawa, 1991 .

Ionization Coefficient of InGaAsP/InP APD

Yoshiji Horikoshi, Yoshifumi Takanashi, 1979 .

Lifetime of InGaAsP–InP and AlGaAs–GaAs DH Lasers Estimated by the Point Defect Generation Model

Yoshiji Horikoshi, Takeshi Kobayashi, Y. Horikoshi, 1979 .

Organometallic VPE Growth of InAs

Takashi Fukui, Yoshiji Horikoshi, 1979 .

ZnO MSM photodetectors with Ru contact electrodes

Yan-Kuin Su, Shoou-Jinn Chang, Yoshiji Horikoshi, 2005 .

Dynamic behaviour of a GaAs-AlGaAs MQW laser diode

Kenju Otsuka, Yoshiji Horikoshi, Hidetoshi Iwamura, 1983 .