H. Konstanzer

Reliability of 70 nm metamorphic HEMTs

Maximilian Dammann, A. Leuther, Rüdiger Quay, 2004, Microelectron. Reliab..

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

Maximilian Dammann, Rüdiger Quay, H. Konstanzer, 2017, Microelectron. Reliab..

Near-field characteristics of broad area diode lasers during catastrophic optical damage failure

Thomas Elsaesser, H. Konstanzer, Jayanta Mukherjee, 2012, Photonics Europe.

Carrier density dependence of the lifetime of InGaAs/AlGaAs high-power lasers

Reinhart Poprawe, Nicolas Wiedmann, H. Konstanzer, 2002, SPIE OPTO.

Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects

Maximilian Dammann, H. Konstanzer, R. Schmidt, 2017, Microelectron. Reliab..

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology

Maximilian Dammann, Rüdiger Quay, H. Konstanzer, 2018, Microelectron. Reliab..

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

Maximilian Dammann, Rüdiger Quay, H. Konstanzer, 2015, Microelectron. Reliab..

Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests

H. Konstanzer, R. Quay, D. Schwantuschke, 2014, 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Reliability of AlGaN/GaN HEMTs under DC- and RF-operation

W. Bronner, H. Konstanzer, R. Quay, 2009, 2009 Reliability of Compound Semiconductors Digest (ROCS).

Near-field dynamics of broad area diode laser at very high pump levels

Thomas Elsaesser, H. Konstanzer, Jayanta Mukherjee, 2011 .