Michael Mikulla

发表

Maximilian Dammann, A. Leuther, Rüdiger Quay, 2004, Microelectron. Reliab..

Astigmatism and beam quality of high-brightness tapered diode lasers

Michael Mikulla, Marc T. Kelemen, Juergen Weber, 2004, SPIE Photonics Europe.

Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers

Reinhart Poprawe, Nicolas Wiedmann, Juergen Jandeleit, 2001, SPIE OPTO.

High-power InAlGaAs laser diodes with high efficiency at 980 nm

Martin Walther, Michael Mikulla, Guenter Weimann, 1999, Photonics West.

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

Maximilian Dammann, Rüdiger Quay, H. Konstanzer, 2017, Microelectron. Reliab..

High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power

Michael Mikulla, Rudiger Quay, Dirk Schwantuschke, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2008, 2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].

Robust GaN HEMT Low-Noise Amplifier MMICsfor X-Band Applications

Arnulf Leuther, Michael Schlechtweg, Michael Mikulla, 2004 .

High-power high-brightness 3 W tapered lasers tuneable from 940 nm to 980 nm

Michael Mikulla, Marc T. Kelemen, Stefan Moritz, 2006, SPIE LASE.

High-power diode laser arrays emitting at 2 μm with reduced far-field angle

Johannes Schmitz, Michael Mikulla, Joachim Wagner, 2006, SPIE OPTO.

267-W cw AlGaAs/GaInAs diode laser bars

Martin Walther, Peter Loosen, Reinhart Poprawe, 2000, Photonics West - Optoelectronic Materials and Devices.

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications

Rolf Aidam, Karl Schneider, Michael Schlechtweg, 2006, IEICE Trans. Electron..

Advanced mm-WaveICsandApplications

Arnulf Leuther, H. Massler, Michael Schlechtweg, 2005 .

High-brightness laser diodes using angular filtering by total reflection

Konstantin Boucke, Martin Walther, Reinhart Poprawe, 2001, SPIE OPTO.

Characterization and modeling of InGaAs/GaAs multiple quantum well lasers by capacitance-voltage measurements

Michael Mikulla, Eric C. Larkins, J. Rosenzweig, 1997, Photonics West.

High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF

Arnulf Leuther, Michael Schlechtweg, Michael Mikulla, 2013, 2013 European Microwave Integrated Circuit Conference.

Carrier density dependence of the lifetime of InGaAs/AlGaAs high-power lasers

Reinhart Poprawe, Nicolas Wiedmann, H. Konstanzer, 2002, SPIE OPTO.

8-W high-efficiency high-brightness tapered diode lasers at 976 nm

Jürgen Weber, Michael Mikulla, Rudolf Moritz, 2006, SPIE LASE.

Improved beam quality for high-power tapered laser diodes with LMG (low-modal-gain) epitaxial layer structures

Martin Walther, Michael Mikulla, Guenter Weimann, 1998, Photonics West.

Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers

Michael Mikulla, Eric C. Larkins, Josef Rosenzweig, 1996, Photonics West.

With electroluminescence microcopy towards more reliable AlGaN/GaN transistors

Stefan Müller, Michael Mikulla, Joachim Wagner, 2015, SPIE NanoScience + Engineering.

GaSb-based 1.9- to 2.4-μm quantum well diode lasers with low-beam divergence

Johannes Schmitz, Michael Mikulla, Joachim Wagner, 2005, SPIE OPTO.

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2011, Microelectron. Reliab..

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2014, Microelectron. Reliab..

Comparison between 50-W tapered laser arrays and tapered single emitters

Konstantin Boucke, Reinhart Poprawe, Michael Mikulla, 2006, SPIE LASE.

Gallium Nitride RF-devices: An overview on the development activities in Europe

Michael Mikulla, Rudiger Quay, 2010, 2010 IEEE MTT-S International Microwave Symposium.

High-power high-brightness ridge-waveguide tapered diode lasers at 940 nm

Martin Walther, Nicolas Wiedmann, Michael Mikulla, 2002, SPIE OPTO.

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs

Maximilian Dammann, Rüdiger Quay, Michael Mikulla, 2015, 2015 IEEE International Reliability Physics Symposium.

Integrated reverse-diodes for GaN-HEMT structures

Michael Schlechtweg, Michael Mikulla, Rudiger Quay, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Modeling of the performance of high-brightness tapered lasers

Michael Mikulla, Stefan Morgott, Guenter Weimann, 2000, Photonics West - Optoelectronic Materials and Devices.

High-power high-brightness tapered diode lasers and amplifiers

Michael Mikulla, Marc T. Kelemen, Juergen Weber, 2005, SPIE OPTO.

High-power 980-nm semiconductor lasers by MBE

Martin Walther, Michael Mikulla, Marc T. Kelemen, 2001, SPIE/OSA/IEEE Asia Communications and Photonics.

High-brightness 1040-nm tapered diode lasers

Michael Mikulla, Marc T. Kelemen, Juergen Weber, 2003, Photonics Fabrication Europe.

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

Maximilian Dammann, Rüdiger Quay, H. Konstanzer, 2015, Microelectron. Reliab..

High-power high-brightness ridge-waveguide tapered diode lasers at 14xx nm

Rolf Aidam, Michael Mikulla, Marc T. Kelemen, 2005, SPIE OPTO.

Q- and E-band amplifier MMICs for satellite communication

Matthias Seelmann-Eggebert, Arnulf Leuther, Beatriz Aja, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

GaN‐based high voltage transistors for efficient power switching

Michael Mikulla, Rudiger Quay, Detlef Peschel, 2013 .

Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency

Matthias Seelmann-Eggebert, Wolfgang Bronner, Michael Schlechtweg, 2009 .

Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications

Arnulf Leuther, Michael Mikulla, Dirk Schwantuschke, 2012 .

High-Gain Millimeter-Wave AlGaN/GaN Transistors

Michael Mikulla, Rudiger Quay, Dirk Schwantuschke, 2013, IEEE Transactions on Electron Devices.

Influence of the epitaxial layer structure on the beam quality factor of tapered semiconductor amplifiers

Michael Mikulla, J. Braunstein, Rudolf Moritz, 1997, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.

AlGaN/GaN epitaxy and technology

Rolf Aidam, Wolfgang Bronner, Lutz Kirste, 2010, International Journal of Microwave and Wireless Technologies.

70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Arnulf Leuther, Martin Walther, Michael Schlechtweg, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate

Michael Mikulla, Oliver Ambacher, Christian Manz, 2015 .

Near-diffraction-limited high power diode laser tunable from 895 to 960 nm

Michael Mikulla, Marc T. Kelemen, Joseph Rogg, 2002, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.

Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power

Michael Mikulla, Marc T. Kelemen, G. Bihlmann, 2005 .

80 /spl mu/m Wide InAIGaAs Laser Diodes with 44% Wallplug Efficiency at 7 W cw Output Power

Michael Mikulla, J. Braunstein, Alexis Schmitt, 1998, CLEO/Europe Conference on Lasers and Electro-Optics.

Beam quality and linewidth enhancement factor of ridge-waveguide tapered diode lasers

Michael Mikulla, Marc T. Kelemen, Joseph Rogg, 2002, IEEE 18th International Semiconductor Laser Conference.

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

Michael Mikulla, Joachim Wagner, Oliver Ambacher, 2014 .

High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm

Michael Mikulla, J. Braunstein, M. Walther, 1998 .

Band-edge aligned quaternary carrier barriers in InGaAs-AlGaAs high-power diode lasers for improved high-temperature operation

Konstantin Boucke, Nicolas Wiedmann, Michael Mikulla, 2002 .

Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

Wolfgang Bronner, Michael Mikulla, Oliver Ambacher, 2010 .

X-band T/R-module front-end based on GaN MMICs

Matthias Seelmann-Eggebert, Martin Oppermann, Michael Mikulla, 2009, International Journal of Microwave and Wireless Technologies.

Advanced millimeter-wave ICs using metamorphic HEMT technology

Arnulf Leuther, H. Massler, Michael Schlechtweg, 2006 .

Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si

Lutz Kirste, Michael Mikulla, Rachid Driad, 2013 .

Large area MSM photodiode array for 0.85 /spl mu/m wavelength 10 Gbit/s per channel parallel optical links

Wolfgang Bronner, Michael Schlechtweg, Michael Mikulla, 2002 .

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

Matthias Seelmann-Eggebert, Michael Mikulla, Jutta Kuhn, 2010, International Journal of Microwave and Wireless Technologies.

Gain saturation and high-power pulsed operation of GaSb-based tapered diode lasers with separately contacted ridge and tapered section

Michael Mikulla, Joachim Wagner, Marc T. Kelemen, 2006 .

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Wolfgang Bronner, Michael Mikulla, Oliver Ambacher, 2010 .

Tapered High-Power, High-Brightness Diode Lasers: Design and Performance

Michael Mikulla, M. Mikulla, 2000 .

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

Matthias Seelmann-Eggebert, Michael Mikulla, Rudiger Quay, 2012, International Journal of Microwave and Wireless Technologies.

Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

Michael Mikulla, Joachim Wagner, Rudiger Quay, 2012 .

Longitudinal carrier density measurement of high power broad area laser diodes

Reinhart Poprawe, Michael Mikulla, Guenter Weimann, 2002 .