W.P. Bai

MOS devices with high quality ultra thin CVD ZrO/sub 2/ gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes

S.J. Lee, Y.H. Kim, C.H. Lee, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Laminated metal gate electrode with tunable work function for advanced CMOS

N. Balasubramanian, D.L. Kwong, W.P. Bai, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes

S.J. Lee, C.H. Lee, D.L. Kwong, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Self-aligned ultra thin HfO/sub 2/ CMOS transistors with high quality CVD TaN gate electrode

C.H. Lee, J.J. Lee, D.L. Kwong, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).