Fanny Dahlquist

4.5 kV 4H-SiC diodes with ideal forward characteristic

H. Bleichner, H. Lendenmann, A. Mukhitdinov, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Junction barrier schottky rectifiers in silicon carbide

Fanny Dahlquist, F. Dahlquist, 2002 .

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Bleichner, H. Lendenmann, Christer Hallin, 2002 .

A 2.8kV, Forward Drop JBS Diode with Low Leakage

Carl-Mikael Zetterling, Mikael Östling, Fanny Dahlquist, 2000 .

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Mikael Östling, Fanny Dahlquist, K. Rottner, 1997 .

Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

H. Lendenmann, P. Skytt, N. Johansson, 2001 .

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC

H. Lendenmann, Christer Hallin, Fanny Dahlquist, 2003 .

A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability

Mikael Östling, H. Lendenmann, Fanny Dahlquist, 2002 .