V. Bondarenko

SiC devices for converter and motor drive applications at extreme temperatures

V. Bondarenko, M.S. Mazzola, R. Kelley, 2006, 2006 IEEE Aerospace Conference.

Reverse conduction properties of vertical SiC trench JFETs

K. Chatty, V. Bondarenko, D. C. Sheridan, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications

V. Bondarenko, M.S. Mazzola, R. Kelley, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Saturation current improvement in 1200 V normally-off SiC VJFETs using non-uniform channel doping

V. Bondarenko, D. C. Sheridan, J. B. Casady, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Record 2.8mΩ-cm2 1.9kV enhancement-mode SiC VJFETs

V. Bondarenko, D.C. Sheridan, J.B. Casady, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.