Gottlieb S. Oehrlein

发表

Plasma-based dry etching techniques in the silicon integrated circuit technology

Gottlieb S. Oehrlein, John F. Rembetski, G. Oehrlein, 1992, IBM J. Res. Dev..

The state of the art in multicolor visible photolithography

John S. Petersen, Zuleykhan Tomova, John T. Fourkas, 2018, Advanced Lithography.

Surface science issues in plasma etching

Marc Schaepkens, Gottlieb S. Oehrlein, Marcus F. Doemling, 1999, IBM J. Res. Dev..

Thin films for high-resolution, 3-color lithography

Amy Mullin, John T. Fourkas, John Petersen, 2018, Advanced Lithography.

Some properties of crystallized tantalum pentoxide thin films on silicon

Gottlieb S. Oehrlein, A. Reisman, F. d'Heurle, 1984 .

Competitive reactions of fluorine and oxygen with W, WSi2, and Si surfaces in reactive ion etching using CF4/O2

Gottlieb S. Oehrlein, J. Lennart Lindstöm, 1989 .

Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2008 .

Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives

Gottlieb S. Oehrlein, G. Oehrlein, B. Kastenmeier, 1995 .

Plasma-surface interactions of advanced photoresists with C4F8∕Ar discharges: Plasma parameter dependencies

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists

Robert L. Bruce, Carlton G Willson, Gottlieb S. Oehrlein, 2011 .

Substrate interconnect technologies for 3-D MEMS packaging

Reza Ghodssi, Gottlieb S. Oehrlein, Tomohiro Iguchi, 2005 .

Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

Ying Zhang, Olivier Joubert, Gottlieb S. Oehrlein, 1994 .

Studies of the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma

Robert L. Bruce, Carlton G Willson, Gottlieb S. Oehrlein, 2010 .

Surface Chemistry Studies of Copper Chemical Mechanical Planarization

Gottlieb S. Oehrlein, G. Oehrlein, J. Hernandez, 2001 .

Principal Component Analysis of Optical Emission Spectroscopy and Mass Spectrometry: Application to Reactive Ion Etch Process Parameter Estimation Using Neural Networks

Reza Shadmehr, Paul B. Chou, Robert S. Jaffe, 1992 .

Asymmetric microtrenching during inductively coupled plasma oxide etching in the presence of a weak magnetic field

Marc Schaepkens, Gottlieb S. Oehrlein, G. Oehrlein, 1998 .

Selective dry etching of silicon with respect to germanium

James W. Corbett, Gottlieb S. Oehrlein, G. Oehrlein, 1990 .

Reactive ion etching of silicon using bromine containing plasmas

Gottlieb S. Oehrlein, G. Oehrlein, T. D. Bestwick, 1990 .

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

Gottlieb S. Oehrlein, J. Langan, G. Oehrlein, 1998 .

Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

Marc Schaepkens, Gottlieb S. Oehrlein, G. Oehrlein, 1999 .

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Gottlieb S. Oehrlein, J. M. Cook, M. Schaepkens, 2000 .

Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine‐based reactive ion etching of silicon trenches

Gottlieb S. Oehrlein, G. Oehrlein, J. F. Rembetski, 1990 .

Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials

S. Engelmann, Erica Iacob, Gottlieb S. Oehrlein, 2006 .

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Eric A. Joseph, Christer Hedlund, Gottlieb S. Oehrlein, 2004 .

Photoluminescence characterization of SF6–O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

Silicon etching in NF3/O2 remote microwave plasmas

Gottlieb S. Oehrlein, J. Langan, G. Oehrlein, 1999 .

Dry etching damage of silicon: A review

Gottlieb S. Oehrlein, G. Oehrlein, 1989 .

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3

Ying Zhang, Gottlieb S. Oehrlein, David Vender, 1994 .

Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3

Olivier Joubert, Gottlieb S. Oehrlein, David Vender, 1994 .

Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Sidewall surface chemistry in directional etching processes

Gottlieb S. Oehrlein, G. Oehrlein, Y. Kurogi, 1998 .

Surface Modifications of Electronic Materials Induced by Plasma Etching

Kevin K. Chan, Mark A. Jaso, Gottlieb S. Oehrlein, 1989 .

Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films

David B. Graves, Robert L. Bruce, C. G. Willson, 2010 .

Role of the dense amorphous carbon layer in photoresist etching

John T. Fourkas, Zuleykhan Tomova, Adam Pranda, 2018 .

Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Gottlieb S. Oehrlein, G. Oehrlein, M. Schaepkens, 2000 .

Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2010 .

Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy

Randall M. Feenstra, Gottlieb S. Oehrlein, G. Oehrlein, 1985 .

Interactive effects in the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Photoluminescence characterization of SF6O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

Gottlieb S. Oehrlein, G. Oehrlein, B. Kastenmeier, 1996 .

Front Matter: Volume 8685

Ying Zhang, Qinghuang Lin, Gottlieb S. Oehrlein, 2013 .

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Robert L. Bruce, Sebastian Engelmann, Sandra C. Hernández, 2015 .

Reactive ion etching of SiGe alloys using fluorine‐containing plasmas*

Ying Zhang, James W. Corbett, Gottlieb S. Oehrlein, 1993 .

Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕Ar discharges and energetic ion beams

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2007 .

Real-time measurements of plasma photoresist modifications: The role of plasma vacuum ultraviolet radiation and ions

David B. Graves, Gottlieb S. Oehrlein, D. Graves, 2012 .

Electron, ion and vacuum ultraviolet photon effects in 193 nm photoresist surface roughening

David B. Graves, Robert L. Bruce, Gottlieb S. Oehrlein, 2010 .

Real time characterization of polymer surface modifications by an atmospheric-pressure plasma jet: Electrically coupled versus remote mode

Yevgeny Raitses, Gottlieb S. Oehrlein, Pingshan Luan, 2014 .

Chemical Mechanical Planarization of Copper Damascene Structures

Gottlieb S. Oehrlein, G. Oehrlein, J. King, 2000 .

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, 2016 .

Hydrogen plasma induced defects in silicon

Gottlieb S. Oehrlein, S. Jeng, G. Scilla, 1988 .

Fabrication and Performance Limits of Sub-0.1 µm Cu Interconnects

Yiping Zhao, K. Rose, Tung-Sheng Kuan, 2000 .

Gas-phase studies in inductively coupled fluorocarbon plasmas

Marc Schaepkens, Harold M. Anderson, Gottlieb S. Oehrlein, 2001 .