Byung Joon Choi

发表

Nobuhiko P. Kobayashi, R. Stanley Williams, J. Joshua Yang, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Memristive Devices for Computing: Mechanisms, Applications and Challenges

John Paul Strachan, R. Stanley Williams, Byung Joon Choi, 2013 .

Scalable excitatory synaptic circuit design using floating gate based leaky integrators

Doo Seok Jeong, Inho Kim, Jung-Hae Choi, 2017, Scientific Reports.

Memristor Binarized Neural Networks

Kyeong-Sik Min, Son Ngoc Truong, Khoa Van Pham, 2018, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE.

Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator

Doo Seok Jeong, Inho Kim, Guhyun Kim, 2016, Front. Neurosci..

Oxide based memristive devices

Feng Miao, Byung Joon Choi, J. J. Yang, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

Byung Joon Choi, R. Waser, D. Jeong, 2005 .

Engineering nonlinearity into memristors for passive crossbar applications

Byung Joon Choi, J. Yang, M. Pickett, 2012 .

Nitride memristors

Kate J. Norris, Byung Joon Choi, J. Yang, 2012 .

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Kate J. Norris, Byung Joon Choi, J. Yang, 2013, Nano letters.

Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2011, Advanced materials.

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

Byung Joon Choi, Seol Choi, C. Hwang, 2007 .

High‐Speed and Low‐Energy Nitride Memristors

Byung Joon Choi, J. Yang, R. Williams, 2016 .

Identification of a determining parameter for resistive switching of TiO2 thin films

Byung Joon Choi, Seol Choi, D. Jeong, 2005 .

Resistive Switching in Pt ∕ Al2O3 ∕ TiO2 ∕ Ru Stacked Structures

Byung Joon Choi, Seol Choi, D. Jeong, 2006 .

Filamentary Resistive Switching Localized at Cathode Interface in NiO Thin Films

Byung Joon Choi, C. Hwang, K. Kim, 2009 .

Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching

Byung Joon Choi, J. Han, W. Jeong, 2020, Nanoscale research letters.

Trilayer Tunnel Selectors for Memristor Memory Cells

Kate J. Norris, Byung Joon Choi, J. Yang, 2015, Advanced materials.

Improved resistive switching behavior of multiwalled carbon nanotube/TiO2 nanorods composite film by increased oxygen vacancy reservoir

Byung Joon Choi, T. Dongale, Ijaz Ali, 2020 .

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application.

Catherine E. Graves, Byung Joon Choi, J. Yang, 2016, Nano letters.

A physical model of switching dynamics in tantalum oxide memristive devices

Byung Joon Choi, J. Yang, R. Williams, 2013 .

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure

Byung Joon Choi, Jun Yeong Seok, C. Hwang, 2011, Nanotechnology.

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

Byung Joon Choi, C. Hwang, S. Kim, 2013 .

Study on the resistive switching time of TiO2 thin films

Sung-Sil Cho, Cheol Seong Hwang, Suk-Kyoung Hong, 2006 .

Neuromorphic Computing: Memristors for Energy‐Efficient New Computing Paradigms (Adv. Electron. Mater. 9/2016)

Doo Seok Jeong, Sungho Kim, Cheol Seong Hwang, 2016 .

Effects of moisture barriers on resistive switching in Pt-dispersed SiO2 nanometallic thin films

I-Wei Chen, Byung Joon Choi, I. Chen, 2013 .

Electroforming Processes in Metal Oxide Resistive‐Switching Cells

Doo Seok Jeong, Cheol Seong Hwang, Byung Joon Choi, 2016 .

(In,Sn)[sub 2]O[sub 3]∕TiO[sub 2]∕Pt Schottky-type diode switch for the TiO[sub 2] resistive switching memory array

Byung Joon Choi, Seol Choi, C. Hwang, 2008 .

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

Cheol Seong Hwang, Jaewon Song, Yong Cheol Shin, 2008 .

Interfacial and electrical properties of Al2O3/GaN metal–oxide–semiconductor junctions with ultrathin AlN layer

Byung Joon Choi, Dong Ha Kim, Hogyoung Kim, 2017 .

Study of the negative resistance phenomenon in transition metal oxide films from a statistical mechanics point of view

Doo Seok Jeong, Cheol Seong Hwang, Byung Joon Choi, 2006 .

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Tae Hyung Park, Cheol Seong Hwang, Suock Chung, 2015, Scientific Reports.

Cause and prevention of moisture-induced degradation of resistance random access memory nanodevices.

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2013, ACS nano.

A Parallel Circuit Model for Multi‐State Resistive‐Switching Random Access Memory

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2012 .

Demonstration and Modeling of Multi-Bit Resistance Random Access Memory

Byung Joon Choi, Albert B. K. Chen, Xiang Yang, 2013 .

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.

Tae Hyung Park, Cheol Seong Hwang, Byung Joon Choi, 2017, Nanoscale.

Memristor crossbar array for binarized neural networks

Kyeong-Sik Min, Cheol Seong Hwang, Byung Joon Choi, 2019, AIP Advances.

Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Seung Wook Ryu, Cheol Seong Hwang, Byung Joon Choi, 2009 .

Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

Cheol Seong Hwang, Byung Joon Choi, C. Hwang, 2007 .

Cyclic PECVD of Ge2Sb2Te5 Films Using Metallorganic Sources

Cheol Seong Hwang, Yong Cheol Shin, Byung Joon Choi, 2007 .

Recent Progress on the Application of Atomic Layer Deposition for Lithium Ion Batteries

Byung Joon Choi, Dong Ha Kim, 2016 .

Resolving voltage-time dilemma using an atomic-scale lever of subpicosecond electron-phonon interaction.

Byung Joon Choi, I. Tudosa, Albert B. K. Chen, 2014, Nano letters.

Post deposition annealing effect on the properties of Al2O3/InP interface

Byung Joon Choi, Dong Ha Kim, Hogyoung Kim, 2018 .

Current transport properties of Pt/n-GaN Schottky diodes with ZnO interlayers

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2022, Solid State Communications.

Modification of contact properties in Pt/n-GaN Schottky junctions with ZnO and TiO2/ZnO interlayers

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2022, Physica Scripta.

SnO-decorated TiO2 nanoparticle with enhanced photocatalytic performance for methylene blue degradation

Byung Joon Choi, J. Han, Yoon-Kee Kim, 2019, Applied Surface Science.

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Byung Joon Choi, Seol Choi, C. Hwang, 2012 .

Combined Atomic Layer and Chemical Vapor Deposition, and Selective Growth of Ge2Sb2Te5 Films on TiN/W Contact Plug

Byung Joon Choi, Seol Choi, C. Hwang, 2007 .

Effect of ZnO Interlayer on Pt/4H–SiC Schottky Contact

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2022, Transactions on Electrical and Electronic Materials.

Current transport mechanism of atomic layer deposited ZnO on 3C–SiC/p-Si heterostructure

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2021, Solid State Communications.

Barrier height enhancement in Pt/n-Ge Schottky junction with a ZnO interlayer prepared by atomic layer deposition

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2022, Journal of the Korean Physical Society.

Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches

Byung Joon Choi, Si-Young Choi, Junwoo Son, 2022, Nature Communications.

Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition

Byung Joon Choi, Hogyoung Kim, Min Hwan Lee, 2022, ACS omega.

A replacement of high-k process for CMOS transistor by atomic layer deposition

Byung Joon Choi, J. Yang, R. Williams, 2013 .

ALD growth of ZnO on GaN: Schottky barrier height engineering using ZnO interlayer

Byung Joon Choi, Hogyoung Kim, Min Hwan Lee, 2022, Materials Today Communications.

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Byung Joon Choi, C. Hwang, I. Im, 2019, Micromachines.

Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application

Byung Joon Choi, C. Hwang, S. Ivanov, 2015 .

Chemical interaction and ligand exchange between a [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films

Byung Joon Choi, C. Hwang, Taehong Gwon, 2015 .

Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing

Byung Joon Choi, Ha Young Lee, S. Kim, 2021 .

Precursors for gst films in ald/cvd processes-European Patent Office-EP 2698373 A2

Byung Joon Choi, Daeil Kim, Sang-wook Kim, 2014 .

Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5 resistance switching layer

Byung Joon Choi, C. Hwang, K. Kim, 2015 .

Atomic Layer Deposition of TiO2 Films on Ru Buffered TiN Electrode for Capacitor Applications

Byung Joon Choi, C. Hwang, S. Kim, 2009 .

Characteristics of a capacitive probe array for direct surface charge detection

Byung Joon Choi, C. Hwang, K. Kim, 2007 .

Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

Byung Joon Choi, C. Hwang, K. Kim, 2004 .

Effects of moisture and electrode material on AlN-based resistive random access memory

Byung Joon Choi, Hee Ju Yun, 2019, Ceramics International.

Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes

Byung Joon Choi, Hogyoung Kim, Yong Kim, 2018, AIP Advances.

Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC

Byung Joon Choi, Hogyoung Kim, Hee Ju Yun, 2019, Optik.

Effect of growth temperature on AlN thin films fabricated by atomic layer deposition

Byung Joon Choi, Min Soo Kim, S. Ryu, 2018, Ceramics International.

Electrical characteristics of atomic layer deposited AlN on n-InP

Byung Joon Choi, Hogyoung Kim, N. Kim, 2018, Journal of Materials Science: Materials in Electronics.

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

Byung Joon Choi, Hogyoung Kim, H. Yoon, 2018, Nanoscale Research Letters.

Effect of Atomic Layer Deposited AlN Layer on Pt/4H-SiC Schottky Diodes

Byung Joon Choi, Hogyoung Kim, N. Kim, 2018, Transactions on Electrical and Electronic Materials.

Si Surface Passivation by Atomic Layer Deposited Al2O3 with In-Situ H2O Prepulse Treatment

Byung Joon Choi, Hogyoung Kim, 2019, Transactions on Electrical and Electronic Materials.

Effects of SnO2 layer coated on carbon nanofiber for the methanol oxidation reaction

Byung Joon Choi, Dong Ha Kim, J. Han, 2018, Ceramics International.

Atomic layer deposition of ZnO layers on Bi2Te3 powders: Comparison of gas fluidization and rotary reactors

Byung Joon Choi, J. Han, Min Hwan Lee, 2022, Ceramics International.

Formation of Uniform SnO2 Coating Layer on Carbon Nanofiber by Pretreatment in Atomic Layer Deposition

Byung Joon Choi, Dong Ha Kim, D. Riu, 2018 .

DILATOMETRIC ANALYSIS OF THE SINTERING BEHAVIOR OF Bi2Te3 THERMOELECTRIC POWDERS

Byung Joon Choi, Hogyoung Kim, Justine Han, 2020 .

Atomic Layer Deposition for Powder Coating

Byung Joon Choi, J. Han, Seok Choi, 2019, Journal of Korean Powder Metallurgy Institute.

Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition

Byung Joon Choi, Hogyoung Kim, Hee Ju Yun, 2020, Ceramics International.

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2021, Journal of Electronic Materials.

Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Byung Joon Choi, Hogyoung Kim, Bonggeun Shong, 2021 .

Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate

Byung Joon Choi, Hogyoung Kim, Seok Choi, 2020 .

Improved interfacial properties of thermal atomic layer deposited AlN on GaN

Byung Joon Choi, Hogyoung Kim, N. Kim, 2019, Vacuum.

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Byung Joon Choi, Seol Choi, C. Hwang, 2010 .

Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

Byung Joon Choi, D. Jeong, C. Hwang, 2006 .

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.

Byung Joon Choi, C. Hwang, S. Kim, 2019, ACS applied materials & interfaces.

Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor

Byung Joon Choi, J. Han, W. Kang, 2020, Ceramics International.

Tuning electrical properties of Au/n-InP junctions by inserting atomic layer deposited Al2O3 layer

Byung Joon Choi, Dong Ha Kim, Hogyoung Kim, 2017 .

Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition

Byung Joon Choi, Dong Ha Kim, S. Kim, 2017, Electronic Materials Letters.

Controlling Structural and Electrical Properties of Pt Nanopowder-Dispersed SiO 2 Film

Byung Joon Choi, S. W. Lee, Jae Ho Lee, 2014 .

Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode

Byung Joon Choi, C. Hwang, S. Kim, 2013 .

Relation between Resistance and Capacitance in Atomically Dispersed Pt-SiO2 Thin Films for Multilevel Resistance Switching Memory

Byung Joon Choi, 2015 .

Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes

Byung Joon Choi, Hogyoung Kim, Ha Young Lee, 2021, Applied Physics A.

Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics

Byung Joon Choi, Hogyoung Kim, Seok Choi, 2019, Journal of Vacuum Science & Technology B.

Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer

Byung Joon Choi, Hogyoung Kim, Hee Ju Yun, 2018, RSC advances.

Properties of AlN Thin Films on p-Ge Deposited by Thermal Atomic Layer Deposition

Byung Joon Choi, Hogyoung Kim, N. Kim, 2018, Transactions on Electrical and Electronic Materials.

Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2021, Journal of Materials Science: Materials in Electronics.

Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

Byung Joon Choi, Hogyoung Kim, Min Soo Kim, 2017 .

ALD growth of ZnO on p-Si and electrical characterization of ZnO/p-Si heterojunctions

Byung Joon Choi, Hogyoung Kim, Myeong Jun Jung, 2020 .

Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

Byung Joon Choi, C. Hwang, J. Roh, 2009 .

Atomic Layer Deposition of AlN Thin Films on GaN and Electrical Properties in AlN/GaN Heterojunction Diodes

Byung Joon Choi, Hogyoung Kim, Seok Choi, 2020, Transactions on Electrical and Electronic Materials.

Nanoscale Schottky contacts to GaN: Theoretical study and a brief review

Byung Joon Choi, Hogyoung Kim, 2023, AIP Advances.

Tunable solid electrolyte interphase formation on SiO anodes using SnO artificial layers for Lithium-ion batteries

Byung Joon Choi, J. Han, S. Baek, 2021 .

Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors

Byung Joon Choi, C. Hwang, Taehong Gwon, 2014 .

Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory

Jeong Hwan Kim, Byung Joon Choi, Seol Choi, 2009 .

Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films

Byung Joon Choi, Seol Choi, C. Hwang, 2009 .

SiO2 Incorporation Effects in Ge2Sb2Te5 Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

Byung Joon Choi, C. Hwang, S. Hong, 2006 .

Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer

Byung Joon Choi, Dong Ha Kim, Dong-Wook Kim, 2018, Journal of the Korean Physical Society.

AlN passivation effect on Au/GaN Schottky contacts

Byung Joon Choi, Hogyoung Kim, Y. Kwon, 2019, Thin Solid Films.

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition.

Byung Joon Choi, C. Hwang, S. Kim, 2019, ACS applied materials & interfaces.

Phase transformation behaviors of SiO2 doped Ge2Sb2Te5 films for application in phase change random access memory

Byung Joon Choi, C. Hwang, Jong-Ho Lee, 2008 .