S. Keller

发表

A C-band high-dynamic range GaN HEMT low-noise amplifier

A. Chini, R.A. York, U.K. Mishra, 2004, IEEE Microwave and Wireless Components Letters.

III-N heterostructure devices for low-power logic

P. Fay, G. Klimeck, S. Keller, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

High-linearity class B power amplifiers in GaN HEMT technology

A. Chini, R. Coffie, M.J.W. Rodwell, 2003, IEEE Microwave and Wireless Components Letters.

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

S. Kolluri, S. Keller, S. Denbaars, 2009, IEEE Electron Device Letters.

Measured microwave power performance of AlGaN/GaN MODFET

Y.-F. Wu, S. Keller, S. Denbaars, 1996, IEEE Electron Device Letters.

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN

U. K. Mishra, S. Keller, S. Denbaars, 2000 .

High breakdown GaN HEMT with overlapping gate structure

S. Keller, S. Heikman, S. Denbaars, 2000, IEEE Electron Device Letters.

High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates

A. Chini, S. Keller, S. Heikman, 2004, IEEE Electron Device Letters.

Coupling of InGaN quantum well photoluminescence to silver surface plasmons

M. Boroditsky, E. Yablonovitch, I. Gontijo, 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

GaN microwave electronics

Y.-F. Wu, S. Keller, S. Denbaars, 1997, 1997 Topical Symposium on Millimeter Waves. Proceedings (Cat. No.97TH8274).

Current instabilities in GaN-based devices

C. Gaquiere, E. Kohn, A. Vescan, 2001, IEEE Electron Device Letters.

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

Third harmonic generation microscopy of GaN

S. P. DenBaars, Shi-Wei Chu, Chi-Kuang Sun, 2000, Conference Digest. 2000 International Quantum Electronics Conference (Cat. No.00TH8504).

Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

P. Kozodoy, Y.-F. Wu, P. Parikh, 1997, IEEE Electron Device Letters.

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Y.-F. Wu, P. Fini, S. Keller, 1998, IEEE Electron Device Letters.

Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

S. Kolluri, S. P. DenBaars, U. K. Mishra, 2012, IEEE Electron Device Letters.

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Feng Gao, U. K. Mishra, Di Chen, 2012, IEEE Electron Device Letters.

Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy

S. Keller, M. J. W. Rodwell, A. Sivananthan, 2013, 71st Device Research Conference.

Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs

S. Keller, S. Heikman, S. Denbaars, 2005, IEEE Transactions on Electron Devices.

High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate

S. Keller, N. Fichtenbaum, L. McCarthy, 2006, 2006 International Electron Devices Meeting.

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

U. K. Mishra, S. Keller, E. Ahmadi, 2013, 71st Device Research Conference.

AlGaN/AlN/GaN high-power microwave HEMT

R. Coffie, S. Keller, D. Buttari, 2001, IEEE Electron Device Letters.

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

S. Keller, S. Denbaars, L. McCarthy, 2006, IEEE Electron Device Letters.

1 - 8-GHz GaN-based power amplifier using flip-chip bonding

S. Keller, S. Heikman, U. Mishra, 1999, IEEE Microwave and Guided Wave Letters.

Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress

U. K. Mishra, G. A. Umana-Membreno, S. Keller, 2011, IEEE Transactions on Electron Devices.

Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz

R. Coffie, S. Keller, K. Krishnamurthy, 2000, IEEE Electron Device Letters.

High-performance E-mode AlGaN/GaN HEMTs

S. Keller, S. Denbaars, T. Palacios, 2006, IEEE Electron Device Letters.

A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs

M. Higashiwaki, Rongming Chu, S. Keller, 2008, 2008 Device Research Conference.

V-Gate GaN HEMTs for X-Band Power Applications

Rongming Chu, Likun Shen, S. Keller, 2008, IEEE Electron Device Letters.

Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

M. Higashiwaki, U. K. Mishra, R. A. York, 2011, IEEE Transactions on Microwave Theory and Techniques.

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

U. K. Mishra, J. S. Speck, S. Keller, 1995 .

Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology

S. Kolluri, S. P. DenBaars, U. K. Mishra, 2012, IEEE Electron Device Letters.

N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

Rongming Chu, S. Keller, Man Hoi Wong, 2008, IEEE Electron Device Letters.

Effect of ohmic contacts on buffer leakage of GaN transistors

S. Keller, S. Heikman, S. Denbaars, 2006, IEEE Electron Device Letters.

High-power AlGaN/GaN HEMTs for Ka-band applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE Electron Device Letters.

Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN

Umesh K. Mishra, S. Keller, Steven P. DenBaars, 2001 .

N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications

U. K. Mishra, Nidhi, J. S. Speck, 2011, IEEE Electron Device Letters.

Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz

Y.-F. Wu, S. Keller, S. Denbaars, 1997, IEEE Electron Device Letters.

Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications

S. Keller, S. Denbaars, T. Palacios, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs

U. K. Mishra, S. Keller, E. Ahmadi, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

S. Keller, R. Cuerdo, F. Calle, 2009, IEEE Electron Device Letters.

3 - 9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching

Y.-F. Wu, S. Keller, U. Mishra, 1999, IEEE Microwave and Guided Wave Letters.

High power GaN oscillators using field-plated HEMT structure

Hongtao Xu, C. Sanabria, S. Keller, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..