J. Koprinarova

Inversion electron mobility in Si−SiO2 structures oxidized at low and high temperatures

J. Kassabov, Dimitre Z. Dimitrov, J. Koprinarova, 1986 .

Dielectric characteristics of MOS capacitors with rf sputtered Ta/sub 2/O/sub 5/

Elena Atanassova, J. Koprinarova, T. Dimitrova, 2000, 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400).

Structural-phase ordering in Ta/sub 2/O/sub 5/-p-Si heterosystem enhanced by microwave processing

R. V. Konakova, V. V. Milenin, N. S. Boltovets, 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

Effect of microwave radiation on the properties of Ta2O5-Si microstructures

Elena Atanassova, Raisa V. Konakova, V. F. Mitin, 2005, Microelectron. Reliab..

PROPERTIES OF PALLADIUM SILICIDE THIN FILMS OBTAINED BY VACUUM RAPID THERMAL ANNEALING OF R.F. SPUTTERED PD FILMS ON SI

J. Koprinarova, D. B Dimitrov, Kostadinka Gesheva, 1998 .

Dielectric properties of TiO2-films reactively sputtered from Ti in an RF magnetron

D. Todorov, J. Koprinarova, P. Alexandrov, 1996 .