Hans-Joachim Schulze

发表

Hybrid hardware for a highly parallel search in the context of learning classifiers

Mathias Bode, O. Freyd, Joern Fischer, 2001, Artif. Intell..

A NovelDiodeStructure with Controlled Injection ofBackside Holes(CIBH)

Josef Lutz, Hans-Joachim Schulze, Hans-Peter Felsl, 2006 .

Analysis of high-power devices using proton beam induced charge microscopy

Franz-Josef Niedernostheide, Hans-Joachim Schulze, M. Zmeck, 2001, Microelectron. Reliab..

Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions

Hans-Joachim Schulze, Martin Ruff, U. Kellner, 1999 .

Thyristors and IGBTs with integrated self-protection functions

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2007, IET Circuits Devices Syst..

Advances in power electronic devices

Hans-Joachim Schulze, E. Wolfgang, F.-J. Niedernostheide, 1999, IEEE International Electric Machines and Drives Conference. IEMDC'99. Proceedings (Cat. No.99EX272).

Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2014, IET Circuits Devices Syst..

Compensation and doping effects in heavily helium-radiated silicon for power device applications

Josef Lutz, Franz-Josef Niedernostheide, Hans-Joachim Schulze, 2006, Microelectron. J..

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Roman Baburske, 2021, ISPS'21 Proceedings.

A novel 8 KV light-triggered thyristor with overvoltage self protection

Hans-Joachim Schulze, Frank Pfirsch, Heinz Mitlehner, 1990, Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..

Properties of CoolMOS/sup TM/ between 420 K and 80 K-the ideal device for cryogenic applications

Hans-Joachim Schulze, Uwe Linnert, H. W. Lorenzen, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

Analysis of the carrier and temperature distributions in gate turn-off thyristors by internal laser deflection

G. Deboy, Hans-Joachim Schulze, B. Simmnacher, 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

A new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE)

Josef Lutz, Hans-Joachim Schulze, Ralf Siemieniec, 2010, 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Reinhart Job, 2006 .

Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring

Josef Lutz, Hans-Joachim Schulze, Ralf Siemieniec, 2006 .

Comparison of critical current filaments in IGBT short circuit and during diode turn-off

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Frank Pfirsch, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Limits of strongly punch-through designed IGBTs

Franz-Josef Niedernostheide, Hans-Joachim Schulze, Frank Pfirsch, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.