Harry H. Wieder

Effect of optically generated carrier on microwave properties of ridged coplanar waveguide

William S. C. Chang, Hae-Yang Chung, Harry H. Wieder, 1992, Defense, Security, and Sensing.

Novel high-frequency electroabsorption multiple-quantum-well waveguide modulator operating at 1.3 μm on GaAs substrates

William S. C. Chang, Lei Shen, K. K. Loi, 1997, Photonics West.

Optimization of strained-layer InxGa1-xAs/GaAs multiple quantum wells for electroabsorption modulation

William S. C. Chang, Harry H. Wieder, Shigeru Niki, 1990, Photonics West - Lasers and Applications in Science and Engineering.

Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells

Harry H. Wieder, S. Niki, H. Wieder, 1989 .

Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure

Harry H. Wieder, H. Wieder, William S. C. Chang, 1986 .

Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces

Harry H. Wieder, Jianhui Chen, K. Kavanagh, 1992 .

Carrier screening of electric field and electroabsorption saturation in InGaAs-GaAs quantum well structure

M. K. Chin, Harry H. Wieder, S. Niki, 1991 .