D.L. Harame

63-75 GHz fT SiGe-base heterojunction bipolar technology

G.L. Patton, J.H. Comfort, B.S. Meyerson, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process

G.L. Patton, B.S. Meyerson, E.F. Crabbe, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

D.L. Harame, J. Malinowski, D. Sunderland, 1996, International Electron Devices Meeting. Technical Digest.

Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers

D.L. Harame, Qingqing Liang, J.D. Cressler, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

RF analog and digital circuits in SiGe technology

J.R. Long, D.L. Harame, D.S. Malhi, 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

A high-speed complementary silicon bipolar technology with 12-fJ power-delay product

D.L. Harame, J.N. Burghartz, K.A. Jenkins, 1993, IEEE Electron Device Letters.