R. Conti

SOME CONSIDERATIONS ABOUT ENVIRONMENTAL ELF MAGNETIC FIELD REDUCTION

Mario Chiampi, Mauro Zucca, Maurizio Repetto, 2000 .

High Aspect Ratio Trench Filling Using Two‐Step Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass for <0.18 μm Device Application

R. Conti, Ellie Yieh, Donna R. Cote, 1999 .

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

C. Park, N. Loubet, B. Haran, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

D. Tobben, R. Conti, Ellie Yieh, 1999 .