Z-Q. Fang

发表

Electrical and optical properties of ZnO bulk crystals with and without lithium grown by the hydrothermal technique

Michael J. Callahan, David C. Look, Buguo Wang, 2014, Photonics West - Optoelectronic Materials and Devices.

Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy

David C. Look, Z-Q. Fang, Ilesanmi Adesida, 2005 .

Dislocation-Related Electron Capture Behaviour of Traps in N-Type GaN

David C. Look, Z-Q. Fang, D. Look, 2002 .

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

David C. Look, Daniel S. Green, Z-Q. Fang, 2010 .

Electron Irradiation Induced Deep Centers in Hydrothermally Grown ZnO

David C. Look, Z-Q. Fang, Bruce Claflin, 2007 .

Prominent Thermally Stimulated Current Trap in Low-Temperature-Grown Molecular-Beam Epitaxial GaAs

David C. Look, Z-Q. Fang, D. Look, 1993 .

Deep centers in semi‐insulating Fe‐doped native GaN substrates grown by hydride vapour phase epitaxy

Drew Hanser, David C. Look, Z-Q. Fang, 2008 .

Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes

D. C. Reynolds, David C. Look, Z-Q. Fang, 2000 .

On the main irradiation-induced defect in GaN

David C. Look, Z-Q. Fang, D. Look, 2000 .

Deep centers in n-GaN grown by reactive molecular beam epitaxy

David C. Look, Z-Q. Fang, Hadis Morkoç, 1998 .

Electron-Irradiation-Induced Deep Level in n -Type GaN

David C. Look, Z-Q. Fang, M. P. Mack, 1998 .

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Z-Q. Fang, Haipeng Tang, S. J. Rolfe, 2010 .