Jean-Paul Barnes

发表

Impact of Passivation Conditions on Characteristics of Bottom-Gate IGZO Thin-Film Transistors

Bernard Aventurier, Francois Templier, Thi Thu Thuy Nguyen, 2015, Journal of Display Technology.

Rapid, semi-quantitative depth profiling of ultra-thin films using plasma profiling time-of-flight mass spectrometry

Agnès Tempez, Sébastien Legendre, Jean-Paul Barnes, 2017 .

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

S. Kerdiles, Hervé Fontaine, François Martin, 2015 .

Unifying natural and laboratory chemical weathering with interfacial dissolution–reprecipitation: A study based on the nanometer-scale chemistry of fluid–silicate interfaces

Thierry Epicier, Jean-Paul Barnes, Roland Hellmann, 2012 .

Structural, electrical and optical properties of in-situ phosphorous-doped Ge layers

J. M. Fedeli, Marc Veillerot, Jean-Paul Barnes, 2012 .

Study on C60 Doped PMMA for Organic Memory Devices

Gerard Ghibaudo, C. Licitra, Raluca Tiron, 2010 .

Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

Rafal E. Dunin-Borkowski, Jean-Michel Hartmann, Jean-Paul Barnes, 2010 .

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Laurent Vivien, J. M. Fedeli, Jean-Paul Barnes, 2010 .

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

Jean-Michel Hartmann, Matthias Bauer, Jean-Paul Barnes, 2017 .

Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

Sylvain Barraud, Wilfried Vandervorst, Didier Blavette, 2017 .