Shinichiro Kimura

发表

Current reliability issues and future technologies for systems on silicon – processes, circuits, chip architecture, and design

Eiji Takeda, Takao Watanabe, Kei Suzuki, 2000 .

Damping Control of Liquid Container by a Carrier with Dual Swing Type Active Vibration Reducer : Damping Carrier by Using Gain Schedule Technique Considering Changes of Static Liquid Level

Masafumi Hamaguchi, Takao Taniguchi, Shinichiro Kimura, 2003 .

Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

Shinichiro Kimura, Hiromasa Noda, Kaori Nakamura, 1993 .

Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster

Nobuyuki Sugii, Toshiro Hiramoto, Hidekazu Oda, 2008 .

A 0.1 mu m-gate elevated source and drain MOSFET fabricated by phase-shifted lithography

Digh Hisamoto, E. Takeda, Shinichiro Kimura, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate

Nobuyuki Sugii, Katsuyoshi Washio, Digh Hisamoto, 2002 .

Short channel characteristics of Si MOSFET with extremely shallow source and drain regions formed by inversion layers

Fumio Murai, Shinichiro Kimura, H. Noda, 1994 .

Low Temperature Oxidation of Silicon in a Microwave‐Discharged Oxygen Plasma

Hideo Sunami, Eiichi Murakami, Takashi Tokuyama, 1985 .

A diagonal active-area stacked capacitor DRAM cell with storage capacitor on bit line

Kiyoo Itoh, Eiji Takeda, Norio Hasegawa, 1990 .

An optically delineated 4.2- mu m/sup 2/ self-aligned isolated-plate stacked-capacitor DRAM cell

Kiyoo Itoh, Norio Hasegawa, Yoshinobu Nakagome, 1988 .

Significance of charge sharing in causing threshold voltage roll-off in highly doped 0.1-μm Si metal oxide semiconductor field effect transistors and its suppression by atomic layer doping

Shinichiro Kimura, Hiromasa Noda, Kaori Nakamura, 1994 .

Direct evaluation of an interfacial layer in high-k gate dielectrics by 1/f noise measurements

Tsuyoshi Ishikawa, Digh Hisamoto, Shinichiro Kimura, 2003 .

Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Hiroyuki Uchiyama, M. Aoki, Toshiki Sugawara, 2009 .

Characteristics of Boron Diffusion from BSG Film and the Formation of Ultra-Shallow, Low-Resistance Junctions

Eiichi Murakami, Hiroshi Kujirai, Shinichiro Kimura, 1995 .

Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current

Nobuyuki Sugii, Toshiro Hiramoto, Hidekazu Oda, 2009 .

A sub-0.1-/spl mu/m grooved gate MOSFET with high immunity to short-channel effects

Toru Toyabe, Shinichiro Kimura, Hiromasa Noda, 1993, Proceedings of IEEE International Electron Devices Meeting.

Silicon light-emitting transistor for on-chip optical interconnection

Nobuyuki Sugii, Digh Hisamoto, Kazuyoshi Torii, 2006 .

Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs

Yoshifumi Kawamoto, Shinichiro Kimura, Yasushiro Nishioka, 1990 .

Rutile-type TiO2 thin film for high-k gate insulator

Yasuhiro Shimamoto, Hiroshi Miki, Toshihide Nabatame, 2003 .

Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode

Nobuyuki Sugii, Toshiro Hiramoto, Toshiaki Iwamatsu, 2008 .

Short-channel-effect-suppressed sub-0.1-/spl mu/m grooved-gate MOSFET's with W gate

Toru Toyabe, Shinichiro Kimura, Hiromasa Noda, 1995 .

Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks

Yasuhiro Shimamoto, Osamu Tonomura, Matty Caymax, 2005 .