J. Hoentschel

Compensation of operation-related FMAX degradation by adaptive control of circuit operating voltage

M. Horstmann, D. Greenlaw, M. A. Wiatr, 2009, 2009 IEEE International Reliability Physics Symposium.

Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies

Ran Yan, T. Herrmann, M. Horstmann, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Taking the next step on advanced HKMG SOI technologies — From 32nm PD SOI volume production to 28nm FD SOI and beyond

M. Horstmann, J. Hoentschel, J. Schaeffer, 2012, 2012 IEEE International SOI Conference (SOI).

Multiple Stress Memorization In Advanced SOI CMOS Technologies

M. Gerhardt, T. Feudel, M. Horstmann, 2007, 2007 IEEE Symposium on VLSI Technology.

Implementation and optimization of asymmetric transistors in advanced SOI CMOS technologies for high performance microprocessors

D. Greenlaw, M. Wiatr, T. Feudel, 2008, 2008 IEEE International Electron Devices Meeting.