Theodosia Gougousi

Characterization of the role of oxide spacers in multilayer-enhanced SERS probes

Pietro Strobbia, Brian M. Cullum, Alex Henegar, 2015, Sensing Technologies + Applications.

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Robert Bass, David J. Meyer, David F. Storm, 2014 .

Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Gregory N. Parsons, David B. Terry, Theodosia Gougousi, 2003 .

Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si

Theodosia Gougousi, J. Derek Demaree, T. Gougousi, 2007 .

Photodissociation study of CH 3 Br in the first continuum

Theodosia Gougousi, Peter C. Samartzis, Theofanis N. Kitsopoulos, 1998 .

Photodissociation study of CH3Br in the first continuum

Theodosia Gougousi, T. Kitsopoulos, T. Gougousi, 1998 .

Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

Theodosia Gougousi, T. Gougousi, John W. Lacis, 2010 .

AIN/GaN insulated gate HEMTs with HfO 2 gate dielectric

J. A. Roussos, David F. Storm, Steven C. Binari, 2009 .