Kozo Makiyama

发表

Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs

Yasuhiro Nakasha, K. Sawada, Toshihide Suzuki, 2003 .

E-Band 85-mW Oscillator and 1.3-W Amplifier ICs Using 0.12µm GaN HEMTs for Millimeter-Wave Transceivers

Satoshi Masuda, Yasuhiro Nakasha, Naoki Hara, 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

76 GHz flip-chip MMICs for automotive radars

Tatsuya Hirose, Yoji Ohashi, Yoshihiro Kawasaki, 1998, 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182).

Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer

Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama, 2008 .

300-GHz Amplifier in 75-nm InP HEMT Technology

Tsuyoshi Takahashi, Yasuhiro Nakasha, Masaru Sato, 2016, IEICE Trans. Electron..

InP-based HEMT Technology and ICs for High-Speed Data Communications

Tatsuya Hirose, Tsuyoshi Takahashi, Yasuhiro Nakasha, 2002 .

Millimeter-Wave GaN HEMT for Power Amplifier Applications

Satoshi Masuda, Keiji Watanabe, Masaru Sato, 2014, IEICE Trans. Electron..

Over 40-Gbit/s InP HEMT ICs for Optical Communication Systems

Satoshi Masuda, Tsuyoshi Takahashi, Yasuhiro Nakasha, 2003 .

Current Status and Future of HEMTs for High-speed Applications

Kozo Makiyama, Tsuyoshi Takahashi, 2018 .

230-240 GHz, 30 dB Gain Amplifier in INP-HEMT for Multi-10 Gb/s Data Communication Systems

Yasuhiro Nakasha, Masaru Sato, Toshihide Suzuki, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

InP HEMT amplifier design and packaging techniques for multi-10-Gbps data reception in sub-millimeter-wave bands

Yasuhiro Nakasha, Masaru Sato, Toshihide Suzuki, 2014, 2014 Asia-Pacific Microwave Conference.

A 20 Gbit/s, 280 GHz wireless transmission in InPHEMT based receiver module using flip-chip assembly

Yasuhiro Nakasha, Masaru Sato, Toshihide Suzuki, 2015, 2015 European Microwave Conference (EuMC).

13.2 Under 0.5W 50Gb/s Full-Rate 4:1MUX and 1:4 DEMUX in 0.13µm InP HEMT Technology

Tatsuya Hirose, T. Takahashi, Yasuhiro Nakasha, 2004 .

GaN MMIC amplifiers for W-band transceivers

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

High performance and high reliability AlGaN/GaN HEMTs

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009 .

SiC Backside Via-hole Process For GaN HEMT MMICs Using High Etch Rate ICP Etching

Y. Inoue, Naoki Hara, Toshihide Kikkawa, 2009 .

Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors

Yasuhiro Nakasha, Masaru Sato, Shoichi Shiba, 2017 .

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Yasuhiro Nakasha, Masaru Sato, Shoichi Shiba, 2017, IEEE Transactions on Electron Devices.

Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

M. Nishi, Naoki Hara, M. Nihei, 2001, Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).

An 80-Gbith 1 :2 Demultiplexer in I*-based HEMT Technology

Tatsuya Hirose, T. Takahashi, Yasuhiro Nakasha, 2004 .

High power and high gain AlGaN/GaN MIS‐HEMTs with high‐k dielectric layer

K. Joshin, Naoki Hara, Toshihide Kikkawa, 2008 .

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Masaru Sato, Naoya Okamoto, Kazukiyo Joshin, 2016, 2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).

Compact receiver module for a 94 GHz band passive millimetre-wave imager

Tatsuya Hirose, Kunio Sawaya, Masaru Sato, 2008 .

A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems

Tatsuya Hirose, Yasuhiro Nakasha, Yoichi Kawano, 2007 .

Flip chip assembly for sub-millimeter wave amplifier MMIC on polyimide substrate

Yasuhiro Nakasha, Masaru Sato, Shoichi Shiba, 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

Reliability of GaN HEMTs: current status and future technology

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009, 2009 IEEE International Reliability Physics Symposium.

High‐power GaN‐HEMT with high three‐terminal breakdown voltage for W‐band applications

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2009 .

High‐fmax GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications

Naoki Hara, Toshihide Kikkawa, Kenji Imanishi, 2007 .