B. S. Poling

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation

E. E. Johnson, B. S. Poling, G. D. Via, 2017, Microelectron. Reliab..

重イオン放射線への曝露後の商用既製algan/GaN HEMT素子の信頼性研究【Powered by NICT】

B. S. Poling, K. D. Bole, J. M. McDermott, 2017 .

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

A. Sasikumar, S. A. Ringel, A. R. Arehart, 2015, Microelectron. Reliab..

Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing

B. S. Poling, E. R. Heller, J. L. Brown, 2015, Microelectron. Reliab..

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN

A. Sasikumar, S. A. Ringel, A. R. Arehart, 2016, Microelectron. Reliab..