Herve Morel

Ultrafast safety system to turn-off normally on SiC JFETs

Dominique Bergogne, Regis Meuret, Damien Risaletto, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Fabrication of integrated inductors on silicon for fully integrated DC-DC microconverters

Yves Lembeye, Jean-Louis Sanchez, David Bourrier, 2003, SPIE MOEMS-MEMS.

Role of the temperature distribution on the PN junction behaviour in the electro‐thermal simulation

Bruno Allard, Kamel Besbes, Hatem Garrab, 2004 .

Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages

Bruno Allard, Pascal Bevilacqua, Dominique Tournier, 2009, 2009 13th European Conference on Power Electronics and Applications.

Reusing basic semiconductor region models in power device bond graph definition

Bruno Allard, J. P. Chante, Herve Morel, 2002 .

A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters

Bruno Allard, Dominique Bergogne, Regis Meuret, 2014, IEEE Transactions on Power Electronics.

High temperature operating converter

Dominique Planson, Pascal Bevilacqua, Dominique Bergogne, 2006 .

Active protections for normally-on SiC JFETs

Cyril Buttay, Dominique Bergogne, Regis Meuret, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs

Kamel Besbes, Atef Jedidi, Hatem Garrab, 2015, 2015 16th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA).

High-temperature behavior of SiC power diodes

Cyril Buttay, Dominique Bergogne, Christophe Raynaud, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Analytic thermal modelling of power electronic components: The Diffusive Representation

Nouri Masmoudi, Bruno Allard, Anis Ammous, 2006 .